Small Signal Bipolar Transistor,
| Parameter Name | Attribute value |
| Objectid | 145154609567 |
| package instruction | , |
| Reach Compliance Code | unknown |
| Country Of Origin | Mainland China |
| YTEOL | 7.5 |
| Maximum collector current (IC) | 3 A |
| Collector-based maximum capacity | 39 pF |
| Collector-emitter maximum voltage | 50 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 200 |
| JESD-30 code | R-PSSO-F3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 0.5 W |
| Maximum power dissipation(Abs) | 1.5 W |
| surface mount | YES |
| Terminal form | FLAT |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 150 MHz |
| VCEsat-Max | 0.7 V |
京公网安备 11010802033920号
EEWORLD
