21L02HDCQC datasheet, PDF - EEWORLD Datasheet

21L02HDCQC: DescriptionStandard SRAM, 1KX1, 250ns, MOS, CDIP16, CERAMIC, DIP-16; Categorystorage storage; File Size146KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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21L02HDCQC Overview

Standard SRAM, 1KX1, 250ns, MOS, CDIP16, CERAMIC, DIP-16

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1435849659
package instruction	DIP, DIP16,.3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	250 ns
I/O type	SEPARATE
JESD-30 code	R-CDIP-T16
JESD-609 code	e0
memory density	1024 bit
Memory IC Type	STANDARD SRAM
memory width	1
Humidity sensitivity level	2A
Number of functions	1
Number of terminals	16
word count	1024 words
character code	1000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1KX1
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP16,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Filter level	MIL-STD-883 Class C
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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