MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM500HA-H
•
•
•
•
•
I
C
Collector current ........................
500A
V
CEX
Collector-emitter voltage ...........
600V
h
FE
DC current gain.............................
750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
93
10 18.5
M4
BX
9
10 10
E
25
27
26.5
φ6.5
BX
M6
E
B
C
E
8
62
48
B
9
16
C
16
25
13.5
9
37.5
28
107
E
4.5
32.2
24.5
7 13
LABEL
35
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
600
600
600
7
500
500
1780
10
5000
–40~+150
–40~+125
Charged part to case, AC for 1 minute
Main terminal screw M6
2500
1.96~2.94
20~30
1.96~2.94
20~30
0.98~1.47
10~15
0.98~1.47
10~15
640
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
Mounting screw M6
—
Mounting torque
B(E) terminal screw M4
BX terminal screw M4
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Switching time
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
(Tj=25°C, unless otherwise noted)
Limits
Test conditions
V
CE
=600V, V
EB
=2V
V
CB
=600V, Emitter open
V
EB
=7V
I
C
=500A, I
B
=0.67A
–I
C
=500A (diode forward voltage)
I
C
=500A, V
CE
=2.5V
Min.
—
—
—
—
—
—
750
—
V
CC
=300V, I
C
=500A, I
B1
=1A, –I
B2
=10A
—
—
Transistor part
Diode part
Conductive grease applied
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
5.0
5.0
500
2.5
3.5
1.8
—
3.0
10
3.5
0.07
0.25
0.04
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/
W
°C/
W
°C/
W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
1000
T
j
=25°C
800
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
10
0
2 3 45 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
T
j
=25°C
T
j
=125°C
V
CE
=2.5V
COLLECTOR CURRENT I
C
(A)
600
I
B
I
B
=2A
I
B
=1A
I
B
=0.5A
=200mA
400
200
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(A)
SATURATION VOLTAGE V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
2.4
2.6
2.8
3.0
3.2
3.4
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
2
7
5
3
2
10
1
7
5
3
2
I
B
=0.67A
T
j
=25°C
T
j
=125°C
T
j
=25°C
V
CE
=2.5V
BASE CURRENT I
B
(A)
V
BE(sat)
10
0
7
5
V
CE(sat)
3
2
–1
10
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
BASE-EMITTER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
10
1
7
5
4
3
2
10
0
7
5
4
3
2
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
4
I
C
=500A
3
SWITCHING TIME
t
on
, t
s
, t
f
(µs)
t
s
2
t
on
V
CC
=300V
I
B1
=1A
–I
B2
=10A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
3
I
C
=300A
I
C
=100A
T
j
=25°C
T
j
=125°C
1
0
10
–2
2 3 4 5 7 10
–1
2 3 4 5 7 10
0
2 3 4 5 7 10
1
10
–1
10
1
t
f
2 3 4 5 7 10
2
BASE CURRENT I
B
(A)
COLLECTOR CURRENT
I
C
(A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
2
COLLECTOR CURRENT I
C
(A)
t
s
, t
f
(µs)
10
1
7
5
4
3
2
t
f
10
0
V
CC
=300V
7
I
C
=500A
5 I
B1
=1A
4
T
j
=25°C
3
T
j
=125°C
2
10
0
2 3 4 5 7 10
1
t
s
REVERSE BIAS SAFE OPERATING AREA
1600
T
j
=125°C
1400
1200
1000
I
B2
=–3A
800
600
–10A
400
200
0
0
100 200 300 400 500 600 700 800
V
CE
(V)
SWITCHING TIME
2 3 4 5 7 10
2
BASE REVERSE CURRENT –I
B2
(A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
10
3
7
5
3
2
10
2
7
5
3
2
100
90
DERATING FACTOR (%)
80
70
60
50
40
30
20
10
0
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT I
C
(A)
10
m
D.
C.
1m
s
s
50µs
100µs
SECOND
BREAKDOWN
AREA
10
1
7
5
3 T
C
=25°C
2 NON–REPETITIVE
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR REVERSE CURRENT –I
C
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10
0
2 3 4 5 7 10
1
0.1
0.08
Z
th (j–c)
(°C/ W)
m
200
s
COLLECTOR
DISSIPATION
0
20
40
60
80 100 120 140 160
T
C
(°C)
CASE TEMPERATURE
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
T
j
=25°C
T
j
=125°C
0.06
0.04
0.02
0
10
–3
2 3 4 5 7 10
–2
2 3 4 5 7 10
–1
2 3 4 5 7 10
0
TIME (s)
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM500HA-H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
SURGE COLLECTOR REVERSE CURRENT
–I
CSM
(A)
5000
4000
3000
2000
1000
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
0
2 3 4 5 7 10
1
10
0.25
0.20
Z
th (j–c)
(°C/ W)
0.15
0.10
0.05
0
10
–3
2 3 4 5 710
–2
2 3 4 5 710
–1
2 3 4 5 7 10
0
TIME (s)
Feb.1999
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