MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
QM400HA-24B
•
•
•
•
•
I
C
Collector current ........................
400A
V
CEX
Collector-emitter voltage .........
1200V
h
FE
DC current gain.............................
750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
20.5
4–φ6.5
23.5
2
28
20.5
13
14
BX
BX
E
70±
0.25
90±
0.5
E
C
10 12
9
E
B
E
10
13
21
C
B
18
23.5 3
93±
0.25
113±
0.5
3–M4
23.5
9.5
2–M8
37MAX.
30.5MAX.
8
LABEL
7
28.5
35
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
(Tj=25°C, unless otherwise noted)
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
1200
1200
1200
7
400
400
3120
20
4000
–40~+150
–40~+125
Charged part to case, AC for 1 minute
Main terminal screw M8
2500
8.83~10.8
90~110
1.96~2.94
20~30
0.98~1.47
10~15
0.98~1.47
10~15
870
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
N·m
kg·cm
g
Mounting screw M6
—
Mounting torque
B(E) terminal screw M4
BX terminal screw M4
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Switching time
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
(Tj=25°C, unless otherwise noted)
Limits
Test conditions
V
CE
=1200V, V
EB
=2V
V
CB
=1200V,Emitter open
V
EB
=7V, Collector open
I
C
=400A, I
B
=530mA
I
C
=–400A (diode forward voltage)
I
C
=400A, V
CE
=4.0V
Min.
—
—
—
—
—
—
750
—
V
CC
=600V, I
C
=400A, I
B1
=800mA, –I
B2
=8.0A
—
—
Transistor part
Diode part
Conductive grease applied
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
6.0
6.0
300
4.0
4.0
1.8
—
2.5
15
3.0
0.04
0.175
0.02
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/
W
°C/
W
°C/
W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
500
I
B
=0.4A
T
j
=25°C
400
I
B
=0.8A
I
B
=0.1A
300
I
B
=80mA
I
B
=0.2A
10
4
7
5
4
3
2
10
3
7
5
4
3
2
10
2
10
1
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I
C
(A)
200
DC CURRENT GAIN h
FE
100
V
CE
=4.0V
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
2
2 3 4 5 7 10
3
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT I
C
(A)
BASE CURRENT I
B
(A)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
SATURATION VOLTAGE V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
V
CE
=2.8V
T
j
=25°C
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
V
BE(sat)
V
CE(sat)
I
B
=530mA
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
2
2 3 4 5 7 10
3
10
–1
2.2
2.6
3.0
3.4
3.8
4.2
10
–1
10
1
BASE-EMITTER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
T
j
=25°C
T
j
=125°C
t
on
, t
s
, t
f
(µs)
4
I
C
=400A
I
C
=300A
3
2
I
C
=200A
I
C
=100A
1
0
10
–2
2 3 5 7
10
–1
2 3 5 7
10
0
2 3 5 7
10
1
T
j
=25°C
T
j
=125°C
SWITCHING TIME
10
1
7
5
4
3
2
10
0
t
s
t
f
7
5
4
t
on
3
2
10
1
2 3 4 5 7 10
2
V
CC
=600V
I
B1
=800mA
–I
B2
=8A
2 3 4 5 7 10
3
BASE CURRENT I
B
(A)
COLLECTOR CURRENT
I
C
(A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
10
2
7
5
4
3
2
10
1
7
5
4
3
2
10
0
10
0
2 3 4 5 7 10
1
T
j
=25°C
T
j
=125°C
V
CC
=600V
I
C
=400A
I
B1
=800mA
REVERSE BIAS SAFE OPERATING AREA
1200
COLLECTOR CURRENT I
C
(A)
T
j
=125°C
I
B2
=–8A
1000
800
600
400
200
0
SWITCHING TIME
t
s
, t
f
(µs)
t
s
t
f
2 3 4 5 7 10
2
0
200
400
600
800
1000 1200
V
CE
(V)
BASE REVERSE CURRENT –I
B2
(A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA
10
3
7
5
3
2
10
2
7
5
3
2
DC
100
200µs
1ms
50µs
100µs
DERATING FACTOR (%)
90
80
70
60
50
40
30
20
10
0
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT I
C
(A)
SECOND
BREAKDOWN
AREA
COLLECTOR
DISSIPATION
10
1
7
5
3
2 T
C
=25°C
NON-REPETITIVE
10
0
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
0
20
40
60
80 100 120 140 160
T
C
(°C)
CASE TEMPERATURE
COLLECTOR REVERSE CURRENT –I
C
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10
0
2 3 5 7 10
1
0.05
0.04
Z
th (j–c)
(°C/ W)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
0.03
0.02
0.01
0
10
–3
2 3 5 7 10
–2
2 3 5 7 10
–1
2 3 5 710
0
TIME (s)
T
j
=25°C
T
j
=125°C
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM400HA-24B
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
SURGE COLLECTOR REVERSE CURRENT
–I
CSM
(A)
4000
3500
3000
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
5
4
3
2
O
rr
I
rr
10
1
V
CC
=600V
I
B1
=0.8A
–I
B2
=8A
T
j
=25°C
T
j
=125°C
t
rr
10
0
I
rr
(A), Q
rr
(µc)
2500
2000
1500
1000
500
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
2
7
5
4
3
2
10
1
7
5
5 7 10
2
2 3 4 5 7 10
3
2 3 45
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT I
F
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
10
0
2 3 5 7 10
1
2 3 5 7
0.20
0.16
Z
th (j–c)
(°C/ W)
0.12
0.08
0.04
0
10
–3
2 3 5 7 10
–2
2 3 5 710
–1
2 3 5 7 10
0
TIME (s)
Feb.1999
t
rr
(µs)
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