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C10T20F

Description
Low Forward Voltage Drop Diode
CategoryDiscrete semiconductor    diode   
File Size39KB,4 Pages
ManufacturerNihon Inter Electronics Corporation
Websitehttp://www.niec.co.jp
Download Datasheet Parametric View All

C10T20F Overview

Low Forward Voltage Drop Diode

C10T20F Parametric

Parameter NameAttribute value
MakerNihon Inter Electronics Corporation
Parts packaging codeD2PAK
package instructionSQUAREPAK-3
Contacts3
Reach Compliance Codeunknow
applicationULTRA FAST RECOVERY
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.98 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current80 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current20 µA
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
FRD
Type :
C10T20F
OUTLINE DRAWING
FEATURES
*
SQUARE-PAK
TO263AB Case (SMD)
Packaged in 24mm Tape and Reel
* Dual Diodes – Cathode Common
* Ultra – Fast Recovery
* Low Forward Voltage Drop
* High Surge Capability
* 200 Volts thru 600 Volts Types Available
Maximum Ratings
Rating
Repetitive Peak Reverse Voltage
Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range
Storage Temperature Range
Symbol
V
RRM
V
RSM
I
O
I
F(RMS)
I
FSM
Tjw
Tstg
80
10
Approx Net Weight:1.4g
C10T20F
200
220
50 Hz,Full Sine Wave
Tc=117°C
Resistive Load
11.1
50 Hz Full Sine Wave,1cycle
Non-repetitive
- 40 to + 150
- 40 to + 150
Unit
V
V
A
A
A
°C
°C
Electrical
Thermal Characteristics
Characteristics
Peak Reverse Current
Peak Forward Voltage
Reverse Recovery Time
Thermal Resistance
Symbol
I
RM
V
FM
Conditions
Min.
-
-
-
-
Typ.
-
-
-
-
Max. Unit
20
0.98
35
3
µA
V
ns
°C/W
Tj=25°C,V
RM
=V
RRM
per Arm
Tj=25°C, I
FM
=5A per Arm
I
FM
= 5 A,
trr
-di/dt= 50 A/µs, Ta= 25°C
Rth(j-c) Junction to Case

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