MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30TB-2H
•
•
•
•
•
I
C
Collector current ..........................
30A
V
CEX
Collector-emitter voltage .........
1000V
h
FE
DC current gain...............................
75
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, DC motor controllers, NC equipment
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
127
7.5 21 7.5 21 7.5 16.5
19
28.5
28.5
21.5
2–φ5.5
P
BuP
EuP
BvP
EvP
U
BuN
BuN EuN BvN EvN BwN EwN
98
110
Tab#110, t=0.5 Tab#250, t=0.8
EuN
N
BvN
EvN
V
BwN
EwN
BwP
EwP
W
BuP EuP BvP EvP BwP EwP
P
25
18
40
25.6
U
N
V
W
26.5
LABEL
17.5
56
Note: All Transistor Units are 3-Stage Darlingtons.
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEX (SUS)
V
CEX
V
CBO
V
EBO
I
C
–I
C
P
C
I
B
–I
CSM
T
j
T
stg
V
iso
—
—
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Collector reverse current
Collector dissipation
Base current
Surge collector reverse current
(forward diode current)
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Weight
(Tj=25°C, unless otherwise noted)
Conditions
I
C
=1A, V
EB
=2V
V
EB
=2V
Emitter open
Collector open
DC
DC (forward diode current)
T
C
=25°C
DC
Peak value of one cycle of 60Hz (half wave)
Ratings
1000
1000
1000
7
30
30
310
2
300
–40~+150
–40~+125
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
2500
1.47~1.96
15~20
500
Unit
V
V
V
V
A
A
W
A
A
°C
°C
V
N·m
kg·cm
g
ELECTRICAL CHARACTERISTICS
Symbol
I
CEX
I
CBO
I
EBO
V
CE (sat)
V
BE (sat)
–V
CEO
h
FE
t
on
t
s
t
f
R
th (j-c) Q
R
th (j-c) R
R
th (c-f)
Thermal resistance
(junction to case)
Contact thermal resistance
(case to fin)
Switching time
Parameter
Collector cutoff current
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-emitter reverse voltage
DC current gain
(Tj=25°C, unless otherwise noted)
Limits
Test conditions
V
CE
=1000V, V
EB
=2V
V
CB
=1000V, Emitter open
V
EB
=7V
I
C
=30A, I
B
=0.6A
–I
C
=30A (diode forward voltage)
I
C
=30A, V
CE
=2.8V/5V
Min.
—
—
—
—
—
—
75/100
—
V
CC
=600V, I
C
=30A, I
B1
=–I
B2
=0.6A
—
—
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
Max.
1.0
1.0
200
2.5
3.5
1.8
—
2.5
15
3.0
0.4
1.5
0.2
Unit
mA
mA
mA
V
V
V
—
µs
µs
µs
°C/
W
°C/
W
°C/
W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
100
T
j
=25°C
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
10
0
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT I
C
(A)
80
DC CURRENT GAIN h
FE
V
CE
=5.0V
60
V
CE
=2.8V
I
B
=2A
I
B
=1A
I
B
=0.5A
I
B
=0.3A
40
20
I
B
=0.1A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
0
0
1.0
2.0
3.0
4.0
5.0
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT I
C
(A)
SATURATION VOLTAGE V
CE (sat)
, V
BE (sat)
(V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
10
–1
1.6
2.0
2.4
2.8
3.2
3.6
V
CE
=2.8V
T
j
=25°C
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10
1
7
5
4
3
2
10
0
7
5
4
3
2
BASE CURRENT I
B
(A)
V
BE(sat)
V
CE(sat)
I
B
=0.6A
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
–1
10
0
BASE-EMITTER VOLTAGE
V
BE
(V)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
COLLECTOR-EMITTER SATURATION
VOLTAGE
V
CE
(sat)
(V)
5
2
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
t
on
, t
s
, t
f
(µs)
4
I
C
=15A
I
C
=30A
3
I
C
=5A
SWITCHING TIME
10
1
7
5
4
3
2
t
s
V
CC
=600V
I
B1
=–I
B2
=0.6A
t
f
t
on
2
1
0
10
–2
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
–1
2 3 4 5 7 10
0
10
0
7
5
4
3
2
10
0
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
1
2 3 4 5 7 10
2
BASE CURRENT I
B
(A)
COLLECTOR CURRENT
I
C
(A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
3
V
CC
=600V
I
B1
=0.6A
I
C
=30A
REVERSE BIAS SAFE OPERATING AREA
80
SWITCHING TIME
10
1
7
5
4
3
2
10
0
7
5
4
3
10
–1
COLLECTOR CURRENT I
C
(A)
2
t
s
, t
f
(µs)
t
s
T
j
=125°C
60
I
B2
=–1A
40
t
f
20
T
j
=25°C
T
j
=125°C
2 3 4 5 7 10
0
2 3 4 5 7 10
1
0
0
200 400 600 800 1000 1200 1400 1600
BASE REVERSE CURRENT –I
B2
(A)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
FORWARD BIAS SAFE OPERATING AREA
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3 T
C
=25°C
2
NON–REPETITIVE
10
–1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
100
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT I
C
(A)
1m
50µ
S
100µ
S
90
DERATING FACTOR (%)
S
80
70
60
50
40
30
20
10
0
0
20
40
60
COLLECTOR
DISSIPATION
SECOND
BREAKDOWN
AREA
µ
S
500
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR REVERSE CURRENT –I
C
(A)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
10
0
2 3 45 710
1
2 3 4 5
0.5
0.4
D
C
80 100 120 140 160
CASE TEMPERATURE
T
C
(°C)
Z
th (j–c)
(°C/ W)
10
7
5
4
3
2
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
2
0.3
0.2
0.1
0
10
–3
2 3 4 5 7 10
–2
2 3 4 5 710
–1
2 3 4 5 7 10
0
10
1
7
5
4
3
2
10
0
0.4
0.8
1.2
T
j
=25°C
T
j
=125°C
1.6
2.0
2.4
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE
–V
CEO
(V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30TB-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT
(DIODE FORWARD SURGE CURRENT)
SURGE COLLECTOR REVERSE CURRENT
–I
CSM
(A)
500
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE (TYPICAL)
10
2
7
5
3
2
I
rr
(A), Q
rr
(µc)
10
1
7
5
3
2
I
rr
10
2
T
j
=25°C
T
j
=125°C
400
10
1
t
rr
(µs)
FORWARD CURRENT I
F
(A)
Feb.1999
300
200
100
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
10
0
Q
rr
10
0
7
5
3
V
CC
=600V
2 t
rr
I
B1
=–I
B2
=0.6A
10
–1
10
–1
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
2 3 4 5 7 10
3
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (DIODE)
0
2 3 4 5 710
1
2 3 4 5 7
10
2.0
1.6
Z
th (j–c)
(°C/ W)
1.2
0.8
0.4
0
10
–3
2 3 4 5 7 10
–2
2 3 4 5 710
–1
2 3 4 5 7 10
0
TIME (s)
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