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QM300HA-HB

Description
HIGH POWER SWITCHING USE INSULATED TYPE
CategoryDiscrete semiconductor    The transistor   
File Size73KB,5 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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QM300HA-HB Overview

HIGH POWER SWITCHING USE INSULATED TYPE

QM300HA-HB Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionFLANGE MOUNT, R-PUFM-X4
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTORS
Maximum collector current (IC)300 A
ConfigurationCOMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)750
Maximum landing time (tf)2000 ns
JESD-30 codeR-PUFM-X4
Number of components3
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)1560 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
VCEsat-Max2.5 V
MITSUBISHI TRANSISTOR MODULES
QM300HA-HB
HIGH POWER SWITCHING USE
INSULATED TYPE
QM300HA-HB
I
C
Collector current ........................
300A
V
CEX
Collector-emitter voltage ...........
600V
h
FE
DC current gain.............................
750
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC motor controllers, UPS, CVCF, Inverters, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
2–M6
2–M4
108MAX.
93±
0.3
E
16
20
4–φ6.5
E
C
62MAX.
C
BX
48±
0.3
BX
9
B
20
B
13
21
29
25.5MAX.
LABEL
36MAX.
41.5MAX.
Feb.1999

QM300HA-HB Related Products

QM300HA-HB QM300HA-H
Description HIGH POWER SWITCHING USE INSULATED TYPE HIGH POWER SWITCHING USE INSULATED TYPE
Maker Mitsubishi Mitsubishi
Reach Compliance Code unknow unknow
Maximum collector current (IC) 300 A 300 A
Configuration COMMON COLLECTOR, 3 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR SINGLE
Minimum DC current gain (hFE) 750 75
Maximum landing time (tf) 2000 ns 15000 ns
Number of components 3 1
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1560 W 1380 W
Certification status Not Qualified Not Qualified
Transistor component materials SILICON SILICON
VCEsat-Max 2.5 V 2 V
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