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QM100DY-24K

Description
HIGH POWER SWITCHING USE INSULATED TYPE
CategoryDiscrete semiconductor    The transistor   
File Size86KB,5 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

QM100DY-24K Overview

HIGH POWER SWITCHING USE INSULATED TYPE

QM100DY-24K Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionFLANGE MOUNT, R-PUFM-X15
Reach Compliance Codeunknow
Maximum collector current (IC)100 A
ConfigurationCOMPLEX
Minimum DC current gain (hFE)75
Maximum landing time (tf)3000 ns
JESD-30 codeR-PUFM-X15
Number of components2
Number of terminals15
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)800 W
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
VCEsat-Max3 V
Base Number Matches1
MITSUBISHI TRANSISTOR MODULES
QM100DY-24K
HIGH POWER SWITCHING USE
INSULATED TYPE
QM100DY-24K
I
C
Collector current ........................
100A
V
CEX
Collector-emitter voltage .........
1200V
h
FE
DC current gain...............................
75
Insulated Type
UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108
4–φ6.5
93±
0.25
B2X
B2
E2
B2X
48±
0.25
C2E1
30
E2
E2 B2
6
15
B1 E1
10.5 6
62
C1
C1
C2E1
E2
B1X
9
B1X
14
8 15.3
3
17
25
8
17
25
8
17
21.5
3
8
1.8
Tab#110, t=0.5
E1
B1
3–M6
16
LABEL
7
30
37
9.5
Feb.1999

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