GTVA261802FC datasheet, PDF - EEWORLD Datasheet

GTVA261802FC: DescriptionRF Power Field-Effect Transistor,; CategoryDiscrete semiconductor The transistor; File Size616KB，2 Pages; ManufacturerCree; Websitehttp://www.cree.com/

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GTVA261802FC Overview

RF Power Field-Effect Transistor,

Communication Infrastructure Products

Wolfspeed offers an extensive portfolio of GaN on SiC and

LDMOS power transistors for use in the design of cellular

transmitters supporting all global standards and frequency

bands, from 450 MHz to 5 GHz and power levels to 1,000 W.

With over 30 years of wide bandgap materials and product

innovation enabling industry-leading devices that power more

and consume less, Wolfspeed is your complete design partner

for your RF needs.

The Wolfspeed Advantage

•

Technology Leadership

• Wide Portfolio Offering

– Deep domain expertise in SiC, GaN on SiC, LDMOS and cellular applications

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– LDMOS and GaN on SiC based products in open cavity and plastic packages

– State of the art high volume, fully automated production facilities

• World Class Production

GaN & LDMOS RF Power Transistor for 5G Networks

wolfspeed.com

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