DSC1103/23
Low-Jitter Precision LVDS Oscillator
Features
• Low RMS Phase Jitter: <1 ps (typ.)
• High Stability: ±10 ppm, ±20 ppm, ±25 ppm,
±50 ppm
• Wide Temperature Range:
- Ext. Industrial –40°C to +105°C
- Industrial –40°C to +85°C
- Ext. Commercial –20°C to +70°C
• High Supply Noise Rejection: –50 dBc
• Wide Frequency Range:
- 2.3 MHz – 460 MHz
• Small Industry Standard Footprints
- 2.5 mm x 2.0 mm
- 3.2 mm x 2.5 mm
- 5.0 mm x 3.2 mm
- 7.0 mm x 5.0 mm
• Excellent Shock and Vibration Immunity
- Qualified to MIL-STD-883
• High Reliability
- 20x better MTF than quartz-based devices
• Low Current Consumption
• Supply Range of 2.25V to 3.63V
• Standby and Output Enable Functions
• Lead Free and RoHS-Compliant
General Description
The DSC1103 and DSC1123 series of high
performance oscillators utilizes a proven silicon MEMS
technology to provide excellent jitter and stability over
a wide range of supply voltages and temperatures. By
eliminating the need for quartz or SAW technology,
MEMS oscillators significantly enhance reliability and
accelerate product development, while meeting
stringent clock performance criteria for a variety of
communications, storage, and networking applications.
DSC1103 has a standby feature allowing it to
completely power-down when EN pin is pulled low. For
DSC1123, only the outputs are disabled when EN is
low. Both oscillators are available in industry standard
packages, including the smallest 2.5 mm x 2.0 mm,
and are drop-in replacements for standard 6-pin LVDS
crystal oscillators.
Block Diagram
Pin 1
Enable
Temp. Sensor &
Compensation
Circuitry
MEMS
Oscillator
Divider
Driver
Pin 6
V
DD
Pin 2
NC
PLL
Pin 5
Output
Applications
• Storage Area Networks
- SATA, SAS, Fibre Channel
• Passive Optical Networks
- EPON, 10G-EPON, GPON, 10G-PON
• HD/SD/SDI Video and Surveillance
• PCI Express Gen 1/Gen 2/Gen 3
• Display Port
Pin 3
GND
Pin 4
Output
2017-2019 Microchip Technology Inc.
DS20005745C-page 1
DSC1103/23
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage .......................................................................................................................................... –0.3V to +4.0V
Input Voltage ...................................................................................................................................... –0.3V to V
DD
+0.3V
ESD Protection (HBM) ...............................................................................................................................................4 kV
ESD Protection (MM) ............................................................................................................................................... 400V
ESD Protection (CDM) ............................................................................................................................................1.5 kV
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Specifications: V
DD
= 3.3V; T
A
= +25°C unless otherwise specified.
Parameters
Supply Voltage (Note
1)
Sym.
V
DD
Min.
2.25
—
Supply Current
I
DD
—
—
Frequency Stability
Δf
—
—
—
Aging - First Year
Aging - After First Year
Start-up Time (Note
2)
Input Logic Levels
Output Disable Time (Note
3)
Output Enable Time
Enable Pull-Up Resistor
(Note
4)
LVDS Outputs
Supply Current
Output Offset Voltage
Delta Offset Voltage
Peak-to-Peak Output Swing
Note 1:
2:
3:
4:
I
DD
V
OS
ΔV
OS
V
PP
—
1.125
—
—
29
—
—
350
32
1.4
50
—
mA
V
mV
mV
Output enabled, R
L
= 100Ω
R = 100Ω Differential
—
Single-Ended
Δf
Y1
Δf
Y2+
t
SU
V
IH
V
IL
t
DA
t
EN
R
PU
—
—
—
0.75 x V
DD
—
—
—
—
—
20
—
—
—
—
—
—
—
—
—
—
—
—
40
22
±10
±20
±25
±50
±5
<±1
5
—
0.25 x V
DD
5
5
20
—
ppm
ppm/yr
ms
V
ns
ms
ns
kΩ
ppm
Typ.
—
—
Max.
3.63
0.095
mA
Units
V
—
DSC1103, EN pin low; all
outputs disabled.
DSC1123, EN pin low; all
outputs disabled.
Includes frequency
variations due to initial
tolerance, temp., and power
supply voltage.
One year at +25°C
Year two and beyond at
+25°C
T = +25°C
Input logic high
Input logic low
—
DSC1103
DSC1123
Pull-up resistor exist.
Conditions
V
DD
pin should be filtered with a 0.1 μF capacitor.
t
SU
is time to 100 ppm stable output frequency after V
DD
is applied and outputs are enabled.
See the
Output Waveform
section and the
Test Circuit
for more information.
Output is enabled if pad is floated or not connected.
DS20005745C-page 2
2017-2019 Microchip Technology Inc.
DSC1103/23
ELECTRICAL CHARACTERISTICS (CONTINUED)
Specifications: V
DD
= 3.3V; T
A
= +25°C unless otherwise specified.
Parameters
Output Transition Rise/Fall
Time (Note
3)
Frequency
Output Duty Cycle
Period Jitter
Sym.
t
R
/t
F
Min.
—
2.3
3.3
SYM
J
PER
48
—
—
Integrated Phase Noise
J
PH
—
—
Note 1:
2:
3:
4:
Typ.
200
—
—
—
2.5
0.28
0.4
1.7
Max.
—
460
460
52
—
—
—
2
ps
RMS
%
ps
RMS
Units
ps
Conditions
20% to 80%
R
L
= 50Ω, C
L
= 2 pF
–20°C to +70°C &
–40°C to +85°C
–40°C to +105°C
Differential
—
200 kHz to 20 MHz
@156.25 MHz
100 kHz to 20 MHz
@156.25 MHz
12 kHz to 20 MHz
@156.25 MHz
f
0
MHz
V
DD
pin should be filtered with a 0.1 μF capacitor.
t
SU
is time to 100 ppm stable output frequency after V
DD
is applied and outputs are enabled.
See the
Output Waveform
section and the
Test Circuit
for more information.
Output is enabled if pad is floated or not connected.
2017-2019 Microchip Technology Inc.
DS20005745C-page 3
DSC1103/23
TEMPERATURE SPECIFICATIONS (Note
1)
Parameters
Temperature Ranges
T
A
Operating Temperature Range
Junction Temperature
Storage Temperature Range
Soldering Temperature
Note 1:
T
A
T
A
T
J
T
S
—
–20
–40
–40
—
–55
—
—
—
—
—
—
—
+70
+85
+105
+150
+150
+260
°C
°C
°C
°C
°C
°C
Ordering Option E
Ordering Option I
Ordering Option L
—
—
40 sec. max.
Sym.
Min.
Typ.
Max.
Units
Conditions
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature, and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.
DS20005745C-page 4
2017-2019 Microchip Technology Inc.
DSC1103/23
2.0
PIN DESCRIPTIONS
PIN FUNCTION TABLE
Pin
Name
EN
NC
GND
OUT
OUT–
VDD
PAD
Enable
Do not connect
Ground
LVDS clock output +
LVDS clock output –
Supply voltage
Tie to Ground
Description
The descriptions of the pins are listed in
Table 2-1.
TABLE 2-1:
Pin Number Pin Number Pin Number Pin Number Pin Number
7x5 with Pad 7x5 w/o Pad
5x3.2
3.2x2.5
2x2.5
1
2
3
4
5
6
PAD
1
2
3
4
5
6
—
1
2
3
4
5
6
—
1
2
3
4
5
6
—
1
2
3
4
5
6
—
TABLE 2-2:
OUTPUT ENABLE MODES
EN Pin
High
NC
Low
DSC1103
Outputs Active
Outputs Active
Standby
DSC1123
Outputs Active
Outputs Active
Outputs Disabled
2017-2019 Microchip Technology Inc.
DS20005745C-page 5
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