AP9971GD
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Fast Switching Speed
▼
PDIP-8 Package
G2
D1
D1
D2
D2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
60V
50mΩ
5A
PDIP-8
S2
G1
S1
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
60
+25
5
3.2
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
200809223
AP9971GD
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=2.5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
V
DS
=60V, V
GS
=0V
V
GS
=+25V
I
D
=5A
V
DS
=48V
V
GS
=10V
V
DS
=30V
I
D
=5A
R
G
=3.3Ω,V
GS
=10V
R
D
=6Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.06
-
-
-
7
-
-
-
32.5
4.9
8.8
9.6
10
30
5.5
1560
156
110
Max. Units
-
-
50
60
3
-
1
25
+100
-
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-Source Leakage Current (T
j
=70 C)
V
DS
=48V ,V
GS
=0V
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=1.6A, V
GS
=0V
I
S
=5A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
29.2
48
Max. Units
1.2
-
-
V
ns
nC
t
rr
Qrr
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3. Mounted on 1 in
2
copper pad of FR4 board ;90℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9971GD
35
35
T
A
=25 C
30
o
I
D
, Drain Current (A)
25
I
D
, Drain Current (A)
10V
6.0V
4.5V
30
T
A
=150 C
o
25
10V
6.0V
4.5V
20
20
15
15
10
V
G
=3.0V
10
V
G
=3.0V
5
5
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
52
2.0
I
D
=5A
48
I
D
=5A
1.6
T
A
=25
o
C
Normalized R
DS(ON)
V
G
=10V
R
DS(ON)
(m
Ω
)
44
1.2
40
0.8
36
0.4
32
3
5
7
9
11
0.0
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.4
100
2
10
V
GS(th)
(V)
1.3
1.5
I
S
(A)
T
j
=150
o
C
1
T
j
=25
o
C
1.6
1.2
0.1
0.8
0.01
0.1
0.3
0.5
0.7
0.9
1.1
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9971GD
14
10000
f=1.0MHz
I
D
=5A
12
V
GS
, Gate to Source Voltage (V)
10
8
6
C (pF)
V
DS
=48V
V
DS
=38V
V
DS
=30V
C
iss
1000
100
4
C
oss
C
rss
2
0
0
5
10
15
20
25
30
35
40
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty foctor=0.5
Normalized Thermal Response (R
thja
)
10
0.2
1ms
I
D
(A)
1
0.1
0.1
0.05
10ms
100ms
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja=90℃/W
0.1
1s
T
A
=25
o
C
Single Pulse
0.01
DC
10
100
1000
0.001
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : PDIP-8
SYMBOLS
MIN
Millimeters
NOM
MAX
A
A1
E
3.60
0.38
2.90
0.36
1.10
0.76
0.20
9.00
6.10
7.62
8.30
3.18
4.50
----
3.95
0.46
1.45
0.98
0.28
9.60
6.65
7.94
9.65
2.540 BSC
----
5.40
----
5.00
0.56
1.80
1.20
0.36
10.20
7.20
8.26
11.00
----
A
D
B2
A2
A1
L
A2
B
B1
B2
C
D
E
E1
B
E1
B1
e
E2
e
L
C
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
E2
Part Marking Information & Packing : PDIP-8
9971GD
YWWSSS
Part Number
Package Code
meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
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