Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 114822793 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Configuration | Single |
| Maximum drain current (Abs) (ID) | 11 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-609 code | e0 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 70 W |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |