Power Bipolar Transistor, 8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin,
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1689289786 |
| Parts packaging code | TO-66 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 8 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | DARLINGTON |
| Minimum DC current gain (hFE) | 750 |
| JEDEC-95 code | TO-66 |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 75 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD OVER NICKEL |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 4 MHz |
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