JMnic
Product Specification
Silicon PNP Power Transistors
2SA1111 2SA1112
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC2591/2592
・Good
linearity of h
FE
・High
V
CEO
APPLICATIONS
・For
audio frequency, high power
amplifiers application
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
2SA1111
V
CBO
Collector-base voltage
2SA1112
2SA1111
V
CEO
Collector-emitter voltage
2SA1112
V
EBO
I
C
I
CM
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
-180
-5
-1
-1.5
20
150
-55~150
V
A
A
W
℃
℃
Open emitter
-180
-150
V
CONDITIONS
VALUE
-150
V
UNIT
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SA1111 2SA1112
MIN
TYP.
MAX
UNIT
2SA1111
V
(BR)CEO
Collector-emitter
breakdown voltage
2SA1112
I
C
=-0.1mA ,I
B
=0
-150
V
-180
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-10μA ,I
C
=0
-5
V
V
CEsat
Collector-emitter saturation voltage
I
C
=-0.5A; I
B
=-50mA
-0.5
-2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=-0.5A; I
B
=-50mA
-1.0
-2.0
V
μA
μA
I
CBO
Collector cut-off current
V
CB
=-120V; I
E
=0
-1
I
EBO
Emitter cut-off current
V
EB
=-4V; I
C
=0
-1
h
FE-1
h
FE-2
DC current gain
I
C
=-150mA ; V
CE
=-10V
I
C
=-500mA ; V
CE
=-5V
65
330
DC current gain
50
C
OB
Output capacitance
I
E
=0 ; V
CB
=-10V;f=1MHz
30
pF
f
T
Transition frequency
I
C
=50mA ; V
CE
=-10V
200
MHz
h
FE-1
Classifications
P
65-110
Q
90-155
R
130-220
S
185-330
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1111 2SA1112
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1111 2SA1112
4