CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
1.
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
2. For
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
These specifications apply for
T
A
= -10°C to +100°C,
unless otherwise noted. Typical values are at T
A
= +25°C,
V
IN
= 12V; Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified.
Temperature limits established by characterization and are not production tested.
CONDITIONS
MIN
TYP
MAX
UNITS
PARAMETER
VIN
VIN Power-on Reset (POR)
Rising Threshold
Hysteresis
VIN Shutdown Supply Current
VIN Standby Supply Current
LINEAR REGULATOR
LDO5 Output Voltage
I
_LDO5
= 0
5.3
20
-
-
5.4
80
6
150
5.5
150
15
250
V
mV
µA
µA
EN1 = EN2 = GND or Floating, LDO3EN = GND
EN1 = EN2 = GND or Floating, LDO3EN = V
CC
4.9
4.9
-
-
-
4.63
-
3.25
3.25
-
1.1
0.94
-1
-
5.0
5.0
190
4.35
4.15
4.80
2.5
3.3
3.3
180
-
-
-
36
5.1
5.1
-
-
-
4.93
3.2
3.35
3.35
-
2.5
1.06
1
60
V
V
mA
V
V
V
V
V
mA
V
V
µA
I
_LDO5
= 100mA (Note 3)
LDO5 Short-Circuit Current (Note 3)
LDO5 UVLO Threshold Voltage (Note 3)
LDO5 = GND
Rising edge of LDO5
Falling edge of LDO5
SMPS2 to LDO5 Switchover Threshold
SMPS2 to LDO5 Switchover Resistance (Note 3) V
OUT2
to LDO5, V
OUT2
= 5V
LDO3 Output Voltage
I
_LDO3
= 0
I
_LDO3
= 100mA (Note 3)
LDO3 Short-Circuit Current (Note 3)
LDO3EN Input Voltage
LDO3 = GND
Rising edge
Falling edge
LDO3EN Input Leakage Current
LDO3 Discharge ON-Resistance
V
CC
V
CC
Input Bias Current (Note 3)
V
CC
Start-up Voltage
PWM
EN1 = EN2 = V
CC
, FB1 = FB2 = 0.65V
EN1 = EN2 = LDO3EN = GND
LDO3EN = GND or V
CC
LDO3EN = GND
-
3.45
2
3.6
-
3.75
mA
V
FN6831 Rev 0.00
February 4, 2009
Page 2 of 20
ISL62386
Electrical Specifications
These specifications apply for
T
A
= -10°C to +100°C,
unless otherwise noted. Typical values are at T
A
= +25°C,
V
IN
= 12V; Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified.
Temperature limits established by characterization and are not production tested.
(Continued)
CONDITIONS
MIN
-
V
OUT
regulated to 0.6V
FB = 0.6V
-1
-10
200
F
SW
= 300kHz
V
IN
> 6V for V
OUT
= 5.5V
-12
0.6
-
TYP
0.6
-
-
-
-
-
14
MAX
-
1
30
600
12
5.5
50
UNITS
V
%
nA
kHz
%
V
PARAMETER
Reference Voltage (Note 3)
Regulation Accuracy
FB Input Bias Current
Frequency Range
Frequency Set Accuracy (Note 4)
VOUT Voltage Regulation Range
VOUT Soft-Discharge Resistance
POWER-GOOD
PGOOD Pull-Down Impedance
PGOOD Leakage Current
Maximum PGOOD Sink Current (Note 3)
PGOOD Soft-start Delay
(Note 3)
PGOOD = V
CC
-
-
-
32
0
5
2.75
5.60
50
1
-
3.70
7.50
µA
mA
ms
ms
From EN1(2) = High, then from EN2(1) High to
PGOOD High
From EN1(2) = Floating, then from EN2(1) High
to PGOOD High
2.20
4.50
GATE DRIVER
UGATE Pull-Up ON-Resistance (Note 3)
UGATE Source Current (Note 3)
UGATE Pull-Down ON-Resistance (Note 3)
UGATE Sink Current (Note 3)
LGATE Pull-Up ON-Resistance (Note 3)
LGATE Source Current (Note 3)
LGATE Pull-Down ON-Resistance (Note 3)
LGATE Sink Current (Note 3)
UGATE to LGATE Deadtime (Note 3)
LGATE to UGATE Deadtime (Note 3)
Bootstrap Diode Forward Voltage (Note 3)
Bootstrap Diode Reverse Leakage Current
CONTROL
FCCM Input Voltage
Low level (DCM enabled)
Float level (DCM with audio filter)
High level (Forced CCM)
FCCM Input Leakage Current
Audio Filter Switching Frequency (Note 3)
EN Input Voltage
FCCM = GND or V
CC
FCCM floating
Clear fault level/SMPS OFF level
Delay start level
SMPS ON level
EN Input Leakage Current
ISEN Input Impedance (Note 3)
EN = GND or V
CC
EN = V
CC
-
1.9
2.4
-2
-
-
1.9
2.4
-3.5
-
-
-
-
-
28
-
-
-
-
600
0.8
2.1
-
2
-
0.8
2.1
-
3.5
-
V
V
V
µA
kHz
V
V
V
µA
k
200mA source current
UGATE-PHASE = 2.5V
250mA source current
UGATE-PHASE = 2.5V
250mA source current
LGATE-PGND = 2.5V
250mA source current
LGATE-PGND = 2.5V
UG falling to LG rising, no load
LG falling to UG rising, no load
2mA forward diode current
V
R
= 25V
-
-
-
-
-
-
-
-
-
-
-
-
1.0
2.0
1.0
2.0
1.0
2.0
0.5
4.0
21
21
0.58
0.2
1.5
-
1.5
-
1.5
-
0.9
-
-
-
-
1
A
A
A
A
ns
ns
V
µA
FN6831 Rev 0.00
February 4, 2009
Page 3 of 20
ISL62386
Electrical Specifications
These specifications apply for
T
A
= -10°C to +100°C,
unless otherwise noted. Typical values are at T
A
= +25°C,
V
IN
= 12V; Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified.
Temperature limits established by characterization and are not production tested.
(Continued)
CONDITIONS
EN = GND
MIN
-
TYP
0.1
MAX
-
UNITS
µA
PARAMETER
ISEN Input Leakage Current (Note 3)
PROTECTION
OCSET Input Impedance (Note 3)
OCSET Input Leakage Current (Note 3)
OCSET Current Source
OCP (V
OCSET
-V
ISEN
) Threshold
UVP Threshold
OVP Threshold
EN = V
CC
EN = GND
EN = V
CC
-
-
9
-1.75
600
0.1
10.0
0.0
84
116
103
150
135
-
-
10.5
1.75
87
120
106
-
-
k
µA
µA
mV
%
%
%
°C
°C
Falling edge, referenced to FB
Rising edge, referenced to FB
Falling edge, referenced to FB
81
113
99.5
-
-
OTP Threshold (Note 3)
Rising edge
Falling edge
NOTES:
3. Limits established by characterization and are not production tested.
4. F
SW
accuracy reflects IC tolerance only; it does not include frequency variation due to V
IN
, V
OUT
, L
OUT
, ESR
COUT
, or other application specific
parameters.
FN6831 Rev 0.00
February 4, 2009
Page 4 of 20
ISL62386
Typical Application Circuits
VBAT
4x10µF
0.22µF
4.7µH
The following typical application circuits generate the 5V/8A and 3.3V/8A main supplies in a
notebook computer. The input supply (VBAT) range is 5.5V to 25V.
BO O T1
V
IN
BOOT2
UG ATE2
PHASE2
0.22µF
IRF7821
4.7µH
14k
0.022µF
5V
330µF
3 .3 V
330µF
IRF7821
UGATE1
PHASE1
0.022µF 14k
IRF7832
LG ATE1
LG ATE2
IRF7832
14k
750
68.1k
1200pF
750
45.3k
1200pF
14k
OCSET1
IS E N 1
VO UT1
FB1
ISL62386
OCSET2
IS E N 2
VOUT2
FB2
10k
3 .3 V
4.7µF
5V
4.7µF
AGND1
AGND2
LDO3
LDO5
PGOOD
EN1
EN2
LD O 3EN
VCC
FCCM
FSET1
FSET2
9.09k
100k
LDO5
1µF
A G N D 1 /2
PGND
24.3k
0.01µF
0.01µF
19.6k
AGND2
AGND1
FIGURE 1. TYPICAL APPLICATION CIRCUIT WITH INDUCTOR DCR CURRENT SENSE
VBAT
4x10µF
0.22µF
IRF7821
UG ATE1
PHASE1
UGATE2
PHASE2
BOOT1
V
IN
BOOT2
IRF7821
0.22µF
4.7µH
0.001
3 .3 V
330µF
0.001
1k
4.7µH
1k
IRF7832
5V
330µF
IRF7832
LG ATE1
LGATE2
1k
1k
750
ISL62386
750
1200pF
45.3k
OCSET1
IS E N 1
VO UT1
FB1
OCSET2
IS E N 2
VOUT2
FB2
68.1k
1200pF
10k
AGND1
9.09k
AGND2
PGOOD
3 .3 V
4.7µF
LDO3
5V
4.7µF
LDO5
100k
LDO 5
EN1
EN2
LD O 3EN
FCCM
FSET1
FSET2
VCC
1µF
PGND
24.3k
19.6k
0.01µF
0.01µF
A G N D 1 /2
AGND2
AGND1
FIGURE 2. TYPICAL APPLICATION CIRCUIT WITH RESISTOR CURRENT SENSE
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