5962-9679605HYA datasheet, PDF

5962-9679605HYA: DescriptionEEPROM, 128KX8, 140ns, Parallel, CMOS, CDIP32, CERAMIC, DIP-32; Categorystorage storage; File Size236KB，19 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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5962-9679605HYA Overview

EEPROM, 128KX8, 140ns, Parallel, CMOS, CDIP32, CERAMIC, DIP-32

Parameter Name	Attribute value
Objectid	2078456064
package instruction	CERAMIC, DIP-32
Reach Compliance Code	unknown
Maximum access time	140 ns
command user interface	NO
Data polling	YES
JESD-30 code	R-CDIP-T32
JESD-609 code	e0
length	42.415 mm
memory density	1048576 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	IN-LINE
page size	128 words
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum seat height	5.13 mm
Maximum standby current	0.000625 A
Maximum slew rate	0.08 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
switch bit	NO
width	15.24 mm
Maximum write cycle time (tWC)	10 ms

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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