TECHNICAL DATA
PNP SILICON AMPLIFIER TRANSISTOR
Qualified per MIL-PRF-19500/357
Devices
2N3634
2N3634L
2N3635
2N3635L
2N3636
2N3636L
2N3637
2N3637L
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
2N3634*
2N3635*
140
140
2N3636*
2N3637*
175
175
Unit
TO-39* (TO-205AD)
2N3634, 2N3635
2N3636, 2N3637
Vdc
Vdc
5.0
Vdc
1.0
Adc
0 (1)
@ T
A
= +25 C
1.0
W
P
T
0 (2)
@ T
C
= +25 C
5.0
W
0
Operating & Storage Junction Temperature Range
-65 to +200
C
T
J
,
T
stg
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 mW/
0
C for T
A
> +25
0
C
2) Derate linearly 28.6 mW/
0
C for T
C
> +25
0
C
TO-5*
2N3634, 2N3635
2N3636, 2N3637
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
V
CB
= 140 Vdc
Emitter-Base Cutoff Current
V
EB
= 3.0 Vdc
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc
2N3634, 2N3635
2N3636, 2N3637
V
(BR)
CEO
140
175
100
10
50
10
10
Vdc
ηAdc
µAdc
ηAdc
µAdc
µAdc
I
CBO
2N3634, 2N3635
I
EBO
I
CEO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3634, L, 2N3635, L, 2N3636, L, 2N3637, L JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 50 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
I
C
= 0.1 mAdc, V
CE
= 10 Vdc
I
C
= 1.0 mAdc, V
CE
= 10 Vdc
I
C
= 10 mAdc, V
CE
= 10 Vdc
I
C
= 50 mAdc, V
CE
= 10 Vdc
I
C
= 150 mAdc, V
CE
= 10 Vdc
Collector-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 50 mAdc, I
B
= 5.0 mAdc
Base-Emitter Saturation Voltage
I
C
= 10 mAdc, I
B
= 1.0 mAdc
I
C
= 50 mAdc, I
B
= 5.0 mAdc
2N3634, 2N3636
25
45
50
50
30
55
90
100
100
60
h
FE
150
2N3635, 2N3637
h
FE
300
V
CE(sat)
0.3
0.6
0.8
0.9
Vdc
V
BE(sat)
0.65
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 30 mAdc, V
CE
= 30 Vdc, f = 100 MHz
2N3634, 2N3636
2N3635, 2N3637
h
fe
1.5
2.0
40
80
100
200
8.0
8.5
160
320
600
1200
200
10
75
5.0
3.0
3.0
Ω
Ω
µs
pF
pF
Forward Current Transfer Ratio
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Input Impedance
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
Small-Signal Open-Circuit Output Admittance
I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz
Output Capacitance
V
CB
= 20 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 1.0 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
Noise Figure
V
CE
= 10 Vdc, I
C
= 0.5 mAdc, R
g
= 1.0
Ω
2N3634, 2N3636
2N3635, 2N3637
2N3634, 2N3636
2N3635, 2N3637
h
fe
h
je
h
oe
C
obo
C
ibo
f = 100 Hz
f = 1.0 kHz
f = 10 kHz
NF
dB
SAFE OPERATING AREA
DC Tests
T
C
= 25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 100 Vdc, I
C
= 30 mAdc
2N3634, 2N3635
V
CE
= 130 Vdc, I
C
= 20 mAdc
2N3636, 2N3637
Test 2
V
CE
= 50 Vdc, I
C
= 95 mAdc
Test 3
V
CE
= 5.0 Vdc, I
C
= 1.0 Adc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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