JMnic
Product Specification
Silicon PNP Power Transistors
2SA1289
DESCRIPTION
・With
TO-220 package
・Complement
to type 2SC3253
・Low
saturation voltage
・Short
switching time
APPLICATIONS
・Various
inductance lamp drivers
for electrical equipment
・
Inverters;converters
・
Power amplification
・
Switching regulator ,driver
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-Peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-80
-60
-5
-5
-7
30
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
V
CEsat
I
CBO
I
EBO
h
FE
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
CONDITIONS
I
C
=-1mA ,R
BE
=∞
I
C
=-1mA; I
E
=0
I
E
=-1mA; I
C
=0
I
C
=-2.5A; I
B
=-0.125A
V
CB
=-40V; I
E
=0
V
EB
=-4V; I
C
=0
I
C
=-1A ; V
CE
=-2V
I
C
=-1A ; V
CE
=-5V
70
100
MIN
-60
-80
-5
TYP.
2SA1289
MAX
UNIT
V
V
V
-0.4
-100
-100
280
V
μA
μA
MHz
h
FE
Classifications
Q
70-140
R
100-200
S
140-280
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1289
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1289
4
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