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BPX 81-4

Description
phototransistors phototransistor
CategoryLED optoelectronic/LED   
File Size236KB,11 Pages
ManufacturerAll Sensors
Environmental Compliance
Download Datasheet Parametric View All

BPX 81-4 Overview

phototransistors phototransistor

BPX 81-4 Parametric

Parameter NameAttribute value
ManufactureOsram Opto Semiconduc
Product CategoryPhototransistors
RoHSYes
Maximum Power Dissipati90 mW
Maximum On-State Collector Curre50 mA
Maximum Dark Curre50 nA
Package / CaseMiniature Array
Collector- Emitter Voltage VCEO Max35 V
Collector-Emitter Breakdown Voltage35 V
Collector-Emitter Saturation Voltage150 mV
Fall Time8 us
Maximum Collector Curre50 mA
Maximum Operating Temperature+ 80 C
Minimum Operating Temperature- 40 C
ProducPhototransistors
Rise Time8 us
Factory Pack Quantity1000
TypeChi
Wavelength850 nm
2014-01-14
Silicon NPN Phototransistor Arrays
NPN-Silizium-Fototransistor Zeilen
Version 1.1
BPX 80, BPX 82 ... BPX 89
Spectral range of sensitivity:
(typ) 450 ... 1100
nm
Package:
Miniature Array, Epoxy
Special:
Multiple-digit array package
• High linearity
• Available in groups
Features:
Spektraler Bereich der Fotoempfindlichkeit:
(typ) 450 ... 1100 nm
Gehäuse:
Miniatur Array, Harz
Besonderheit:
Mehrstellige Zeilenbauform
• Hohe Linearität
• Gruppiert lieferbar
Besondere Merkmale:
Applications
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
Anwendungen
• Miniatur Lichtschranken
• Industrieelektronik
• Messen / Steuern / Regeln
2014-01-14
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