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BTA208M

Description
Three quadrant triacs high commutation
File Size21KB,4 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet View All

BTA208M Overview

Three quadrant triacs high commutation

Philips Semiconductors
Objective specification
Three quadrant triacs
guaranteed commutation
GENERAL DESCRIPTION
Passivated guaranteed commutation
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other highly
inductive loads. These devices balance
the requirements of commutation
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
BTA208S series D, E and F
QUICK REFERENCE DATA
SYMBOL
PARAMETER
BTA208S-
BTA208S-
BTA208S-
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
MAX.
600D
600E
600F
600
8
65
MAX.
-
800E
800F
800
8
65
UNIT
V
DRM
I
T(RMS)
I
TSM
V
A
A
PINNING - SOT428
PIN
NUMBER
1
2
3
tab
Standard
S
MT1
MT2
gate
MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
DRM
I
T(RMS)
I
TSM
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
full sine wave;
T
mb
102 ˚C
full sine wave;
T
j
= 25 ˚C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
TM
= 12 A; I
G
= 0.2 A;
dI
G
/dt = 0.2 A/µs
CONDITIONS
MIN.
-
-
-600
600
1
8
MAX.
-800
800
UNIT
V
A
I
2
t
dI
T
/dt
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
-
-
65
72
21
100
2
5
5
0.5
150
125
A
A
A
2
s
A/µs
A
V
W
W
˚C
˚C
over any 20 ms
period
-
-
-
-
-40
-
1
Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1999
1
Rev 1.200

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