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CY7C1243KV18

Description
36-Mbit QDR® II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
File Size628KB,28 Pages
ManufacturerCypress Semiconductor
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CY7C1243KV18 Overview

36-Mbit QDR® II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)

36-Mbit QDR II+ SRAM 4-Word Burst
Architecture (2.0 Cycle Read Latency)
36-Mbit QDR
®
II+ SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
CY7C1241KV18, CY7C1256KV18
CY7C1243KV18, CY7C1245KV18
®
Features
Configurations
With Read Cycle Latency of 2.0 cycles:
CY7C1241KV18 – 4 M × 8
CY7C1256KV18 – 4 M × 9
CY7C1243KV18 – 2 M × 18
CY7C1245KV18 – 1 M × 36
Separate independent read and write data ports
Supports concurrent transactions
450 MHz clock for high bandwidth
4-word burst for reducing address bus frequency
Double data rate (DDR) interfaces on both read and write ports
(data transferred at 900 MHz) at 450 MHz
Available in 2.0 clock cycle latency
Two input clocks (K and K) for precise DDR timing
SRAM uses rising edges only
Echo clocks (CQ and CQ) simplify data capture in high speed
systems
Data valid pin (QVLD) to indicate valid data on the output
Single multiplexed address input bus latches address inputs
for read and write ports
Separate port selects for depth expansion
Synchronous internally self-timed writes
QDR
®
II+ operates with 2.0 cycle read latency when DOFF is
asserted HIGH
Operates similar to QDR I device with 1 cycle read latency when
DOFF is asserted LOW
Available in × 8, × 9, × 18, and × 36 configurations
Full data coherency, providing most current data
Core V
DD
= 1.8 V ± 0.1 V; I/O V
DDQ
= 1.4 V to V
DD[1]
Supports both 1.5 V and 1.8 V I/O supply
HSTL inputs and variable drive HSTL output buffers
Available in 165-ball FBGA package (13 × 15 × 1.4 mm)
Offered in both Pb-free and non Pb-free packages
JTAG 1149.1 compatible test access port
Phase-locked loop (PLL) for accurate data placement
Description
Functional Description
The CY7C1241KV18, CY7C1256KV18, CY7C1243KV18, and
CY7C1245KV18 are 1.8 V synchronous pipelined SRAMs,
equipped with QDR II+ architecture. Similar to QDR II
architecture, QDR II+ architecture consists of two separate ports:
the read port and the write port to access the memory array. The
read port has dedicated data outputs to support read operations
and the write port has dedicated data inputs to support write
operations. QDR II+ architecture has separate data inputs and
data outputs to completely eliminate the need to “turnaround” the
data bus that exists with common I/O devices. Each port is
accessed through a common address bus. Addresses for read
and write addresses are latched on alternate rising edges of the
input (K) clock. Accesses to the QDR II+ read and write ports are
completely independent of one another. To maximize data
throughput, both read and write ports are equipped with DDR
interfaces. Each address location is associated with four 8-bit
words (CY7C1241KV18), 9-bit words (CY7C1256KV18), 18-bit
words (CY7C1243KV18), or 36-bit words (CY7C1245KV18) that
burst sequentially into or out of the device. Because data is
transferred into and out of the device on every rising edge of both
input clocks (K and K), memory bandwidth is maximized while
simplifying system design by eliminating bus “turnarounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
Table 1. Selection Guide
450 MHz
450
×8
×9
× 18
× 36
710
710
720
1020
400 MHz
400
650
650
660
920
375 MHz
375
620
620
630
870
333 MHz
333
560
560
570
790
Unit
MHz
mA
Maximum operating frequency
Maximum operating current
Note
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V
DDQ
= 1.4 V to V
DD
.
Cypress Semiconductor Corporation
Document Number: 001-57832 Rev. *B
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised February 24, 2011
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