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BYV28-300/30112

Description
DIODE 3.5 A, 300 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size221KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYV28-300/30112 Overview

DIODE 3.5 A, 300 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BYV28-300/30112 Parametric

Parameter NameAttribute value
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationULTRA FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current90 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3.5 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage300 V
Maximum reverse current5 µA
Maximum reverse recovery time0.05 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
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