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1N4004

CategoryGeneral diode   
File Size2MB,2 Pages
ManufacturerYONGYUTAI
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1N4004 Parametric

Parameter NameAttribute value
Diode configuration-
DC reverse withstand voltage (Vr)400V
Average rectified current (Io)1A
Forward voltage drop (Vf)1.1V@1A
Reverse current (Ir)5uA@400V
1N4001 THRU 1N4007
FEATURES
Glass
passivated chip junction
Ideal
for surface mounted applications
Low
leakage
High
forward surge current capability.
High
temperature soldering guaranteed:
260/10 seconds at terminals.
MECHANICAL DATA
Case:
Transfer molded plastic
Epoxy:
UL94V - 0 rate flame retardant.
Polarity:
Color band denotes cathode end
Lead:
Plated terminals solderable per MIL - STD - 202E
method 208C
Weight:
0.002 ounce, 0.057 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings
at 25 ambient temperature unless otherwise specified
Single
phase, half wave, 60Hz, resistive or inductive load.
For
capacitive load derate current by 20%
CatalogNumber
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
at T
A
= 75
Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage Drop
at 1.0A
T
C
= 25
Maximum DC Reverse Current at rated
T
A
= 125
DC blocking voltage
Maximum Full Load Reverse Current, full cycle
average at T
A
= 75
Typical Junction Capacitance (Note 1)
Typical Thermal Resistane (Note 2)
Operating and Storage Temperature Range
NOTES:
1. Measured at 1.0 MHz and applied aberage voltage of 4.0 volts.
2. 6.0 X 6.0mm
2
copper pads to each terminal.
SYMBOLS
V
RRM
V
RMS
V
DC
1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007










 

 

 
 








UNITS

Volts

Volts

Volts
Amp
I
(AV)
I
FSM
V
F
I
R
I
R(AV)
C
J
R

T
J
,T
STG
Amps
Volts

A

A

pF
/w



(-65 to +175)
www.yongyutai.com
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