AO3400C
30V N-Channel MOSFET
General Description
• Trench Power MOSFET technology
• Low R
DS(ON)
• Low Gate Charge
• RoHS and Halogen-Free Compliant
Product Summary
V
DS
I
D
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
30V
6.2A
< 20mΩ
< 26mΩ
ESD protection
Applications
• Ideal for Load Switch
SOT23
Top View
Bottom View
D
D
D
G
S
G
G
S
S
Orderable Part Number
AO3400C
Package Type
SOT23-3
Form
Tape & Reel
Minimum Order Quantity
3000
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
C
T
A
=25°
C
Power Dissipation
B
Symbol
V
DS
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
T
A
=70°
C
P
D
T
J
, T
STG
Maximum
30
±20
6.2
4.8
40
1.3
0.8
-55 to 150
Units
V
V
A
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t ≤ 10s
Steady-State
Steady-State
R
qJA
R
qJL
Typ
70
100
63
Max
90
125
80
Units
°
C/W
°
C/W
°
C/W
Rev.1.0: January 2019
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Page 1 of 5
AO3400C
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
ID=250μA, VGS=0V
V
DS
=30V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS,
I
D
=250mA
V
GS
=10V, I
D
=6.2A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=5.5A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=6.2A
I
S
=1A, V
GS
=0V
T
J
=125°
C
1.3
1.8
16
24
20
33
0.7
1
2
600
V
GS
=0V, V
DS
=15V, f=1MHz
f=1MHz
1.2
70
60
2.4
12
V
GS
=10V, V
DS
=15V, I
D
=6.2A
6
2.2
2.5
4.5
V
GS
=10V, V
DS
=15V, R
L
=2.42W,
R
GEN
=3W
I
F
=6.2A, di/dt=500A/ms
4
20
4
5
6
3.6
20
12
Min
30
1
5
±10
2.3
20
30
26
Typ
Max
Units
V
μA
μA
V
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=6.2A, di/dt=500A/ms
A. The value of R
qJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
qJA
is the sum of the thermal impedance from junction to lead R
qJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2019
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Page 2 of 5
AO3400C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
20
I
D
(A)
4V
30
V
DS
=5V
3.5V
25
4.5V
20
I
D
(A)
15
125°C
15
10
5
0
0
1
2
3
4
5
V
GS
=3V
10
5
0
0
1
2
3
4
5
25°C
V
DS
(Volts)
Figure 1: On-Region Characteristics (Note E)
30
Normalized On-Resistance
1.8
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
25
1.6
R
DS(ON)
(mW)
V
GS
=4.5V
20
V
GS
=10V
I
D
=6.2A
1.4
15
V
GS
=10V
1.2
V
GS
=4.5V
I
D
=5.5A
10
1
5
0
3
6
9
12
15
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
50
I
D
=6.2A
40
0.8
0
25
50
75
100
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00
125°C
I
S
(A)
1.0E-01
1.0E-02
25°C
1.0E-03
25°C
1.0E-04
125°C
R
DS(ON)
(mW)
30
20
10
0
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
2
4
1.0E-05
0.0
0.4
0.6
0.8
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
(Note E)
0.2
1.0
Rev.1.0: January 2019
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Page 3 of 5
AO3400C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=15V
I
D
=6.2A
1000
8
Capacitance (pF)
800
C
iss
600
V
GS
(Volts)
6
4
400
2
200
C
rss
0
5
C
oss
0
0
3
6
9
12
15
0
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
10ms
1000
10.0
R
DS(ON)
limited
10ms
100
T
J(Max)
=150°C
T
A
=25°C
I
D
(Amps)
100ms
1.0
Power (W)
1ms
0.1
10
T
J(Max)
=150°C
T
A
=25°C
DC
10ms
1
0.0
0.01
1
10
V
DS
(Volts)
V
GS
> or equal to 4.5V
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
0.1
100
0.1
1E-05
0.001
0.1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
qJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
qJA
.R
qJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
qJA
=125°C/W
0.1
P
DM
0.01
Single Pulse
T
on
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: January 2019
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Page 4 of 5
AO3400C
Figure A:
Charge Test Circuit & Waveform
Gate
Gate Charge Test Circuit & Waveforms
Vgs
Qg
10V
VDC
+
VDC
-
DUT
Vgs
Ig
+
Vds
-
Qgs
Qgd
Charge
Figure B: Resistive
Switching Test
Circuit & Waveforms
Resistive
Switching Test
Circuit & Waveforms
RL
Vds
Vds
Vgs
Rg
DUT
VDC
+
Vdd
-
Vgs
t
d(on)
t
r
t
on
t
d(off)
t
off
t
f
90%
10%
Vgs
Figure C: Unclamped Inductive
Switching (UIS)
Test Circuit & Waveforms
Unclamped Inductive
Switching (UIS)
Test Circuit & Waveforms
L
Vds
Id
Vgs
Rg
DUT
Vgs
Vgs
Vgs
VDC
E
AR
= 1/2 LI
AR
Vds
2
BV
DSS
+
Vdd
-
Id
I
AR
Figure D:
Recovery Test Circuit & Waveforms
Diode
Diode Recovery Test Circuit & Waveforms
Vds +
DUT
Vgs
t
rr
Q
rr
= - Idt
Vds -
Isd
Vgs
L
Isd
I
F
dI/dt
I
RM
Vdd
VDC
+
Vdd
-
Vds
Ig
Rev.1.0: January 2019
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Page 5 of 5
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