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BY255

Description
3 A, 1300 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size51KB,2 Pages
ManufacturerETC
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BY255 Overview

3 A, 1300 V, SILICON, RECTIFIER DIODE, DO-201AD

BY251
THRU
BY255
3.0 AMPS. Silicon Rectifiers
Voltage Range
200 to 1300 Volts
Current
3.0Amperes
Features
a
a
a
a
a
a
a
a
a
Low forward voltage drop
High current capability
High reliability
High surge current capability
DO-201AD
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: Axial leads, solderable per MIL-
Lead:
STD-202, Method 208 guaranteed
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
250°C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 1.2 grams
a
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
. 375 (9.5mm) Lead Length @T
A
= 75°C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@ 3.0A
Maximum DC Reverse Current @ T
A
=25°C
at Rated DC Blocking Voltage @ T
A
=100°C
Maximum Full Load Reverse Current, Full
Cycle Average .375”(9.5mm) Lead Length
@T
L
=75°C
Typical Junction Capacitance ( Note 1 )
Typical Thermal Resistance RÛJA ( Note 2 )
Operating Temperature Range T
J
Storage Temperature Range T
STG
BY251
200
140
200
BY252
400
280
400
BY253
600
420
600
3.0
150
1.0
5.0
100
30
50
18
-65 to +150
-65 to +150
BY254
800
560
800
BY255
1300
910
1300
Units
V
V
V
A
A
V
uA
uA
uA
pF
°C/W
°C
°C
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Notes:
2. Thermal Resistance from Junction to Ambient .375” (9.5mm) Lead Length.
- 298 -

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