EEWORLDEEWORLDEEWORLD

Part Number

Search

C322320C102J2G5CA

Description
CAPACITOR, CERAMIC, MULTILAYER, 200 V, C0G, 0.001 uF, THROUGH HOLE MOUNT
CategoryPassive components   
File Size1MB,16 Pages
ManufacturerKEMET
Websitehttp://www.kemet.com
Download Datasheet Parametric View All

C322320C102J2G5CA Overview

CAPACITOR, CERAMIC, MULTILAYER, 200 V, C0G, 0.001 uF, THROUGH HOLE MOUNT

C322320C102J2G5CA Parametric

Parameter NameAttribute value
Maximum operating temperature125 Cel
Minimum operating temperature-55 Cel
negative deviation1 %
positive deviation1 %
Rated DC voltage urdc200 V
Processing package descriptionRADIAL LEADED
stateACTIVE
terminal coatingTIN LEAD OVER NICKEL
Installation featuresTHROUGH HOLE MOUNT
Manufacturer SeriesC052
capacitance1.00E-3 uF
packaging shapeRECTANGULAR PACKAGE
Capacitor typeCERAMIC
Terminal shapeWIRE
Temperature Coefficient30ppm/Cel
Temperature characteristic codeC0G
multi-layerYes
MULTILAYER CERAMIC CAPACITORS/AXIAL
& RADIAL LEADED
Multilayer ceramic capacitors are available in a
variety of physical sizes and configurations, including
leaded devices and surface mounted chips. Leaded
styles include molded and conformally coated parts
with axial and radial leads. However, the basic
capacitor element is similar for all styles. It is called a
chip and consists of formulated dielectric materials
which have been cast into thin layers, interspersed
with metal electrodes alternately exposed on opposite
edges of the laminated structure. The entire structure is
fired at high temperature to produce a monolithic
block which provides high capacitance values in a
small physical volume. After firing, conductive
terminations are applied to opposite ends of the chip to
make contact with the exposed electrodes.
Termination materials and methods vary depending on
the intended use.
TEMPERATURE CHARACTERISTICS
Ceramic dielectric materials can be formulated with
Class III:
General purpose capacitors, suitable
a wide range of characteristics. The EIA standard for
for by-pass coupling or other applications in which
ceramic dielectric capacitors (RS-198) divides ceramic
dielectric losses, high insulation resistance and
dielectrics into the following classes:
stability of capacitance characteristics are of little or
no importance. Class III capacitors are similar to Class
Class I:
Temperature compensating capacitors,
II capacitors except for temperature characteristics,
suitable for resonant circuit application or other appli-
which are greater than ± 15%. Class III capacitors
cations where high Q and stability of capacitance char-
have the highest volumetric efficiency and poorest
acteristics are required. Class I capacitors have
stability of any type.
predictable temperature coefficients and are not
affected by voltage, frequency or time. They are made
KEMET leaded ceramic capacitors are offered in
from materials which are not ferro-electric, yielding
the three most popular temperature characteristics:
superior stability but low volumetric efficiency. Class I
C0G:
Class I, with a temperature coefficient of 0 ±
capacitors are the most stable type available, but have
30 ppm per degree C over an operating
the lowest volumetric efficiency.
temperature range of - 55°C to + 125°C (Also
known as “NP0”).
Class II:
Stable capacitors, suitable for bypass
X7R:
Class II, with a maximum capacitance
or coupling applications or frequency discriminating
change of ± 15% over an operating temperature
circuits where Q and stability of capacitance char-
range of - 55°C to + 125°C.
acteristics are not of major importance. Class II
Z5U:
Class III, with a maximum capacitance
capacitors have temperature characteristics of ± 15%
change of + 22% - 56% over an operating tem-
or less. They are made from materials which are
perature range of + 10°C to + 85°C.
ferro-electric, yielding higher volumetric efficiency but
less stability. Class II capacitors are affected by
Specified electrical limits for these three temperature
temperature, voltage, frequency and time.
characteristics are shown in Table 1.
SPECIFIED ELECTRICAL LIMITS
Parameter
Dissipation Factor: Measured at following conditions.
C0G – 1 kHz and 1 vrms if capacitance >1000pF
1 MHz and 1 vrms if capacitance 1000 pF
X7R – 1 kHz and 1 vrms* or if extended cap range 0.5 vrms
Z5U – 1 kHz and 0.5 vrms
Dielectric Stength: 2.5 times rated DC voltage.
Insulation Resistance (IR): At rated DC voltage,
whichever of the two is smaller
Temperature Characteristics: Range, °C
Capacitance Change without
DC voltage
* MHz and 1 vrms if capacitance
100 pF on military product.
Temperature Characteristics
C0G
X7R
2.5%
(3.5% @ 25V)
Z5U
0.10%
4.0%
Pass Subsequent IR Test
1,000 M
F
or 100 G
-55 to +125
0 ± 30 ppm/°C
1,000 M
F
or 100 G
-55 to +125
± 15%
1,000 M
or 10 G
F
+ 10 to +85
+22%,-56%
Table I
4
© KEMET Electronics Corporation, P.O. Box 5928, Greenville, S.C. 29606, (864) 963-6300
Special Uses of Resistors
Special Uses of Resistors  In addition to the functions of current shunting, voltage dividing, voltage reduction and current limiting, resistors also have the following functions. l Level adjustment. ...
zdr FPGA/CPLD
The SEED-EXP430F5529 I bought has arrived! I am shocked!
The SEED-EXP430F5529 I bought has arrived!When I opened it, I was impressed by its beautiful appearance!The built-in LCD is actually a transparent effect similar to frosted glass! ! It seems that ther...
anananjjj Microcontroller MCU
PFC current oscillation problem
[i=s]This post was last edited by paulhyde on 2014-9-15 03:09[/i] [table=98%] [tr][td][align=left] I made a PFC circuit, using TI's UCC28019. It works fine when the current is small, but when the curr...
1742215784 Electronics Design Contest
Five outstanding advantages of TD-SCDMA
当然世界上没有完美的技术,都在不断演进替代之中。TD的主要问题是对同频干扰敏感(上下行同频,不同的基站和手机,上下行之间都相互干扰),网络和终端之间的同步要求高,基站覆盖范围有限,而且对手机移动速度有限;技术优势也不代表市场优势,还要看能否尽快成熟稳定商用,这才是目前最困难的。据说目前TD刚刚完成LCR 语音和64kbps数据测试,384kbps数据还在测试中,2Mbps还没有影子,HSDPA只是...
rain MCU
Basic salary + commission + bonus, please hire Linux Wince software and hardware cooperation experts
Industry PDA R&D and sales ARM7 ARM9 ARM11 hardware platform WINCE LINUX software platform QQ: 1459635026...
bangchuI Linux and Android
EEWORLD University Hall ---- Upload picture test
Upload picture test : https://training.eeworld.com.cn/course/4011...
eric_wang MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1964  2362  321  2841  2725  40  48  7  58  55 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号