dallas semiconductor reliability report:
Process:
Metal:
Single Poly, Single Metal (Ti/TiN layers
Al / 0.5% Cu / 0.8% Si
0.6 µm
DS1208
Standard Process
Gate Ox Thickness:
Cf:
Ea:
β:
60%
0.7
1
160 Å
Passivation:
55
5.5
°C
Volts
TEOS Oxide - Nitride
Summary Data with Chi-Square Distribution Assumed.
Stress Ambient Temperature and Voltage to
Field Ambient Temperature And Voltage
Tuse:
Vuse:
DESCRIPTION
INFANT LIFE
HIGH VOLTAGE LIFE
VEHICLE
DS12885
REV DATE CODE
C1
C1
C1
C1
C1
C1
C1
C1
C1
C1
C1
C2
C2
C2
C2
C2
C2
C2
C2
9804
9804
9804
9804
9807
9807
9807
9807
9752
9752
9752
9808
9808
9808
9832
9832
9832
9835
9835
CONDITION
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
150C, 6.0 VOLTS
150C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
READPOINT
48
336
1000
1500
48
336
1000
1500
48
336
528
48
48
336
48
336
1000
48
336
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
QUANTITY
429
153
153
153
429
153
153
153
399
200
200
200
419
419
195
195
194
370
80
FAILS FILE # DEVICE HRS
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1 22411
0
0
2646132
6606079
13054870
9830474
2646132
6606079
13054870
9830474
2461088
8635397
4934513
1233628
8634985
51809909
1202787
7216725
16553234
2282212
3454159
HIGH TEMPERATURE OPERATING LIFE
INFANT LIFE
HIGH VOLTAGE LIFE
DS12885
INFANT LIFE
HIGH VOLTAGE LIFE
DS2401
HIGH VOLTAGE LIFE
DS2401
HIGH VOLTAGE LIFE
DS2401
INFANT LIFE
OP-LIFE
DS2401
Wednesday, January 26, 2000
dallas semiconductor reliability report:
Process:
Metal:
Single Poly, Single Metal (Ti/TiN layers
Al / 0.5% Cu / 0.8% Si
0.6 µm
DS1208
Standard Process
Gate Ox Thickness:
Cf:
Ea:
β:
60%
0.7
1
160 Å
Passivation:
55
5.5
°C
Volts
TEOS Oxide / Nitride
Summary Data with Chi-Square Distribution Assumed.
Stress Ambient Temperature and Voltage to
Field Ambient Temperature And Voltage
Tuse:
Vuse:
DESCRIPTION
OP-LIFE
INFANT LIFE
OP-LIFE
VEHICLE
DS2401
DS2401
REV DATE CODE
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
9835
9841
9841
9841
9841
9842
9842
9842
9842
9851
9851
9851
9853
9853
9853
9853
9853
9853
9902
9902
CONDITION
125C, 6.0 VOLTS
125C, 7.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 7.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
READPOINT
1000
48
336
1000
2000
48
336
1000
2000
48
336
1000
48
336
1000
48
336
1000
48
336
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
QUANTITY
80
195
115
115
110
195
115
115
115
234
77
77
80
80
80
75
75
75
114
113
FAILS FILE # DEVICE HRS
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1 22990
0
0
0
0
6826076
3269515
4965353
9812484
14135323
3269515
4965353
9812484
14777837
1443345
3324628
6570098
493451
2960708
6826076
462611
2775663
6399446
703168
4181999
INFANT LIFE
OP-LIFE
DS2401
INFANT LIFE
HIGH VOLTAGE LIFE
DS2401
OP-LIFE
DS2401
HIGH VOLTAGE LIFE
DS2401
Wednesday, January 26, 2000
dallas semiconductor reliability report:
Process:
Metal:
Single Poly, Single Metal (Ti/TiN layers
Al / 0.5% Cu / 0.8% Si
0.6 µm
DS1208
Standard Process
Gate Ox Thickness:
Cf:
Ea:
β:
60%
0.7
1
160 Å
Passivation:
55
5.5
°C
Volts
TEOS Oxide / Nitride
Summary Data with Chi-Square Distribution Assumed.
Stress Ambient Temperature and Voltage to
Field Ambient Temperature And Voltage
Tuse:
Vuse:
DESCRIPTION
HIGH VOLTAGE LIFE
VEHICLE
DS2401
REV DATE CODE
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
C2
B1
9902
9902
9902
9902
9902
9902
9902
9902
9902
9921
9926
9926
9926
9928
9928
9928
9928
9943
9943
9822
CONDITION
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
READPOINT
1000
48
336
1000
48
336
1000
48
48
48
48
336
1000
48
168
48
168
48
336
48
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
QUANTITY
113
116
116
116
116
115
115
116
116
97
234
77
77
550
01/08/2000
571
01/14/2000
250
77
253
FAILS FILE # DEVICE HRS
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
9641832
715504
4293026
9897810
715504
4256017
9812484
715504
715504
598310
1443345
3324628
6570098
3392477
3522008
INFANT LIFE
INFANT LIFE
HIGH VOLTAGE LIFE
DS2401
DS2401
HIGH VOLTAGE LIFE
DS2401
INFANT LIFE
HIGH VOLTAGE LIFE
HIGH VOLTAGE LIFE
DS2401
0
0
0
1542035
3324628
1560540
DS2405
Wednesday, January 26, 2000
dallas semiconductor reliability report:
Process:
Metal:
Single Poly, Single Metal (Ti/TiN layers
Al / 0.5% Cu / 0.8% Si
0.6 µm
DS1208
Standard Process
Gate Ox Thickness:
Cf:
Ea:
β:
60%
0.7
1
160 Å
Passivation:
55
5.5
°C
Volts
TEOS Oxide / Nitride
Summary Data with Chi-Square Distribution Assumed.
Stress Ambient Temperature and Voltage to
Field Ambient Temperature And Voltage
Tuse:
Vuse:
DESCRIPTION
HIGH VOLTAGE LIFE
VEHICLE
DS2405
REV DATE CODE
B1
B1
A1
A1
A1
A1
A1
A1
A1
A1
9822
9822
9740
9740
9740
9749
9749
9749
9749
9917
CONDITION
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
125C, 6.0 VOLTS
READPOINT
336
1000
48
336
1000
48
336
1000
1500
48
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
HOURS
QUANTITY
253
253
769
116
116
766
116
116
116
192
FAILS FILE # DEVICE HRS
0
0
0
0
0
0
0
0
0
0
9363238
21587465
4743300
5008530
9897810
4724796
5008530
9897810
7453170
1184283
INFANT LIFE
HIGH VOLTAGE LIFE
DS2409
INFANT LIFE
HIGH VOLTAGE LIFE
DS2409
OP-LIFE
DS2415
DEVICE HRS:
4.26E+08
TOTALS:
FAILURE RATE (Fits):
2
7
Wednesday, January 26, 2000
dallas semiconductor reliability report:
Process:
Metal:
Single Poly, Single Metal (Ti/TiN layers
Al / 0.5% Cu / 0.8% Si
0.6 µm
DS1208
Standard Process
Gate Ox Thickness:
Cf:
Ea:
β:
60%
0.7
1
160 Å
Passivation:
55
5.5
°C
Volts
TEOS Oxide / Nitride
Summary Data with Chi-Square Distribution Assumed.
Stress Ambient Temperature and Voltage to
Field Ambient Temperature And Voltage
Tuse:
Vuse:
DESCRIPTION
File #
22411
22990
VEHICLE
REV DATE CODE
FAILURE MECHANISM
CONDITION
READPOINT
CORRECTIVE ACTION
IN PROCESS
IN PROCESS
QUANTITY
FAILS FILE # DEVICE HRS
FAILURE MODE
PREFUNCTIONAL
PREFUNCTIONAL
SUSPECT GATE OXIDE
SUSPECT GATE OXIDE
DEVICE
DS12885
DS2401
DS2401
DS2405
DS2409
DS2415
REV
C1
C1
C2
B1
A1
A1
DIE SIZE (x)
99
54
54
53
76
56
DIE SIZE (y)
122
28
28
34
75
45
No. of Transistors
16100
2371
2371
0
3600
4830
Wednesday, January 26, 2000
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