SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
7
FEATURES
* Low Equivalent on resistance
R
CE(sat)
=355mΩ at 1A*
FMMT591
C
E
COMPLEMENTARY TYPE- FMMT491
PARTMARKING DETAIL - 591
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
MAX.
VALUE
-80
-60
-5
-2
-1
-200
500
-55 to +150
UNIT CONDITIONS.
V
V
V
-100
-100
-100
-0.3
-0.6
-1.2
-1.0
100
100
80
15
150
10
300
nA
nA
nA
V
V
V
V
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
V
CB
=-60V
V
EB
=-4V, I
C
=0
V
CES
=-60V
I
C
=-500mA,I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, V
CE
=-5V*
I
C
=-1mA, V
CE
=-5V*
I
C
=-500mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
pF
V
CB
=-10V, f=1MHz
UNIT
V
V
V
A
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
SYMBOL MIN.
-80
-60
-5
Collector-Base Breakdown Voltage V
(BR)CBO
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 137
Microcontroller MCU
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