IMH21
Transistors
Dual digital transistors
IMH21
Features
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
V
CE (sat)
=40mV at I
C
/ I
B
=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
I
C
=600mA.
3) Two DTC614T chips in a SMT package.
External dimensions
(Unit : mm)
SMT6
0.3
0.95
(6)
(1)
(4)
(3)
1.6
2.8
0.15
1pin mark
0.95
(5)
(2)
Structure
NPN digital transistor
(Built-in resistor type)
0.3Min.
Each lead has same dimensions
Abbreviated symbol : H21
Equivalent circuit
(4)
(5)
(6)
R
1
R
1
R
1
=10kΩ
(3)
(2)
(1)
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
20
20
12
600
300(TOTAL)
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
∗
∗
200mW per element must not be exceeded.
0.8
1.1
1.9
2.9
1/2
IMH21
Transistor
Electrical characteristics
(Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
BV
CBO
20
Collector-base breakdown voltage
−
−
V I
C
=50µA
20
Collector-emitter breakdown voltage BV
CEO
−
−
V I
C
=1mA
BV
EBO
12
Emitter-base breakdown voltage
−
−
V I
E
=50µA
I
CBO
Collector cutoff current
−
−
0.5
µA
V
CB
=20V
I
EBO
Emitter cutoff current
−
−
0.5
µA
V
EB
=12V
40
Collector-emitter saturation voltage V
CE (sat)
−
150 mV I
C
/ I
B
=50mA
/ 2.5mA
h
FE
V
CE
=5V,
I
C
=50mA
820
DC current transfer ratio
−
2700
−
R
1
7
10
Input resistance
−
13
kΩ
f
T
150
Transition frequency
−
−
MHz V
CE
=10V,
I
E
= −50mA,
f=100MHz
∗
R
on
0.9
Output "ON" resistance
−
−
Ω
VI=5V, R
L
=1kΩ,
f=1KHz
∗
Transition frequency of the device.
Packaging specifications and h
FE
Package
Type
Packaging type
Code
Basic ordering unit (pieces)
IMH21
SMT6
Taping
T110
3000
Electrical characteristic curves
10000
Ta=100°C
Ta=25°C
Ta=
−40°C
V
CE
=5V
10000
I
C
/ I
B
=20
1000
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(mV)
ON RESISTANCE : R
on
(Ω)
DC CURRENT GAIN : h
FE
1000
100
Ta=25°C
f=1kHz
R
L
=1kΩ
h
FE
=250
(5V / 50mA)
1000
100
Ta=100°C
Ta=25°C
Ta=
−40°C
10
10
1
100
0.1
1
10
100
1000
1
0.1
1
10
100
1000
0.1
0.1
1
10
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
INPUT VOLTAGE : VI (V)
Fig.1 DC Current Gain vs.
Collector Current
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
Fig.3 "ON" resistance vs. Input Voltage
R
on
measurement circuit
R
L
=1kΩ
R
on
=
v
0
×R
L
v
i
−v
0
Input
v
i
100mV
(rms)
f=1kHz
V
Output
v
0
v
I
Fig.4 Output "ON" resistance (R
on
)
measurement circuit
2/2
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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Appendix1-Rev1.1
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