KSP10
KSP10
VHF/UHF transistor
1
TO-92
1. Base 2. Emitter 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
P
C
P
C
T
J
T
STG
Rth(j-c)
Rth(j-a)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Power Dissipation (T
a
=25°C)
Derate above 25°C
Collector Power Dissipation (T
C
=25°C)
Derate above 25°C
Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Parameter
Value
30
25
3.0
350
2.8
1.0
8.0
150
-55~150
125
357
Units
V
V
V
mW
mW/°C
W
W/°C
°C
°C
°C/W
°C/W
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
C
ob
C
rb
C
c·rbb´
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Collector Base Feedback Capacitance
Collector Base Time Constant
Test Condition
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=2V, I
C
=0
V
CE
=10V, I
C
=4mA
I
C
=4mA, I
B
=0.4mA
V
CE
=10V, I
C
=4mA
V
CE
=10V, I
C
=4mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
E
=0, f=1MHz
V
CB
=10V, I
C
=4mA,
f=31.8MHz
0.35
650
0.7
0.65
9.0
60
0.5
0.95
V
V
MHz
pF
pF
ps
Min.
30
25
3.0
100
100
Max.
Units
V
V
V
nA
nA
* Pulse Test: PW≤300µs, Duty Cycle≤2%
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSP10
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10000
V
CE
= 10V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
100
1000
V
BE
(sat)
10
100
V
CE
(sat)
1
1
10
100
1000
10
0.1
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
10000
140
V
CE
= 10V
f=100MHz
120
], INPUT ADMITTANCE
1000
100
80
g
ib
60
100
-b
ib
40
y
ib
[
20
100
Ω
10
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
f[MHz], FREQUENCY
Figure 3. Current Gain Bandwidth Product
Figure 4. Rectangular Form
], FORWARD TRANSFER ADMITTANCE
0
100
90
80
70
], OUTPUT ADMITTANCE
-10
b
fb
60
50
40
30
20
10
0
-10
-20
-30
100
1000
-20
1000MHz
-30
-g
fb
700
-40
y
ob
[
-60
0
10
20
30
40
50
60
70
80
90
g
ib
[
]
y
fb
[
Figure 5. Polar Form
©2002 Fairchild Semiconductor Corporation
Ω
Ω
400
-50
200
100
Ω
f[MHz], FREQUENCY
Figure 6. Rectangular Form
Rev. A2, September 2002
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As used herein:
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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