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RB548W

Description
0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size41KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

RB548W Overview

0.1 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE

RB548W Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-75A
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.45 V
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.5 A
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
RB548W
Diodes
Schottky barrier diode
RB548W
Application
Rectifying small power
External dimensions
(Units : mm)
1.6
±
0.2
1.0
±
0.1
+0.1
0.2
−0.05
(1)
0.5 0.5
(2)
+0.1
0.2
−0.05
0.8
±
0.1
1.6
±
0.2
0.7
±
0.1
0.55
±
0.1
+0.1
0.3
−0.05
0.15
±
0.05
Construction
Silicon epitaxial planer
ROHM : EMD3
EIAJ :
JEDEC :
Circuit
(1) K
(2) A
(3) A, K
Absolute maximum ratings(Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
∗1
Forward current surge peak
Junction temperature
Storage temperature
∗1
Rating of per diode
∗2
60Hz, 1cyc. Rating of per diode
∗2
Symbol
V
R
I
O
I
FSM
Tj
Tstg
Limits
30
100
0.5
125
−40
to
+125
Unit
V
mA
mA
°C
°C
Electrical characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
Typ.
Max.
0.450
0.5
Unit
V
µA
I
F
=10mA
V
R
=10V
Conditions
∗Please
pay attention to static electricity when handling.
0.1Min.
(3)
3 V
Features
1) Extra small mold type. (EMD3)
2) High reliability.
0~0.1
1/2
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