RTF010P02
Transistors
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
∗1
I
SP
P
D
∗2
Tch
Tstg
Limits
−20
±12
±1
±4
−0.4
−4
0.8
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Total power dissipation
Channel temperature
Range of Storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
Typ.
−
−
−
−
280
310
570
−
150
20
20
9
8
25
10
2.1
0.5
0.5
Max.
±10
−
−1
−2.0
390
430
800
−
−
−
−
−
−
−
−
−
−
−
I
GSS
−
Gate-source leakage
Drain-source breakdown voltage
V
(BR) DSS
−20
Zero gate voltage drain current
−
I
DSS
Gate threshold voltage
V
GS (th)
−0.7
−
∗
Static drain-source on-state
−
R
DS (on)
resistance
−
Y
fs
∗
0.7
Forward transfer admittance
−
C
iss
Input capacitance
−
C
oss
Output capacitance
−
Reverse transfer capacitance
C
rss
∗
−
Turn-on delay time
t
d (on)
∗
−
Rise time
t
r
∗
−
Turn-off delay time
t
d (off)
∗
−
Fall time
t
f
−
Total gate charge
Q
g
−
Gate-source
charge
Q
gs
Gate-drain
charge
−
Q
gd
∗Pulsed
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
V
GS
=±12V, V
DS
=0V
I
D
=
−1mA,
V
GS
=0V
V
DS
=
−20V,
V
GS
=0V
V
DS
=
−10V,
I
D
=
−1mA
I
D
=
−1A,
V
GS
=
−4.5V
I
D
=
−1A,
V
GS
=
−4V
I
D
=
−0.5A,
V
GS
=
−2.5V
V
DS
=
−10V,
I
D
=
−0.5A
V
DS
=
−10V
V
GS
=0V
f=1MHz
I
D
=
−0.5A
V
DD
−15
V
V
GS
=
−4.5V
R
L
=30Ω
R
GS
=10Ω
V
DD
−15V
R
L
15Ω
V
GS
=
−4.5V
R
GS
=10Ω
I
D
=
−1A
Body diode characteristics (source-drain characteristics)
VSD
−
−
−1.2
Forward voltage
V
I
S
=
−0.4A,
V
GS
=0V
2/4
RTF010P02
Transistors
Electrical characteristic curves
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
10
V
DS
= −10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
10000
Ta=25°C
Pulsed
10000
V
GS
= −4.5V
Pulsed
DRAIN CURRENT :
−I
D
(A)
1
0.1
1000
V
GS
= −2.5V
V
GS
= −4.0V
V
GS
= −4.5V
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
0.01
0.001
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
100
0.01
0.1
1
10
100
0.01
0.1
1
10
GATE-SOURCE VOLTAGE :
−V
GS
(V)
DRAIN CURRENT :
−I
D
(A)
DRAIN CURRENT :
−I
D
(A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
REVERSE DRAIN CURRENT :
−I
S
(A)
V
GS
= −4V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
10000
10000
V
GS
= −2.5V
Pulsed
10
V
GS
=0V
Pulsed
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=
−25°C
0.1
100
0.01
0.1
1
10
100
0.01
0.1
1
10
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
DRAIN CURRENT :
−I
D
(A)
DRAIN CURRENT :
−I
D
(A)
SOURCE-DRAIN VOLTAGE :
−V
SD
(V)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
1000
GATE-SOURCE VOLTAGE :
−V
GS
(V)
SWITCHING TIME : t (ns)
Ta=25°C
f=1MHz
V
GS
=0V
10000
CAPACITANCE : C (pF)
1000
Ta=25°C
V
DD
= −15V
V
GS
= −4.5A
R
G
=10Ω
Pulsed
8
7
6
5
4
3
2
1
0
0
0.5
1
1.5
2
Ta=25°C
V
DD
= −15V
I
D
= −1A
R
G
=10Ω
Pulsed
t
f
100
C
iss
100
t
d (off)
10
t
d (on)
t
r
C
rss
C
oss
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
2.5
3
DRAIN-SOURCE VOLTAGE :
−V
DS
(V)
DRAIN CURRENT :
−I
D
(A)
TOTAL GATE CHARGE : Qg (nC)
Fig.7 Typical Capacitance
vs. Drain-Source Voltage
Fig.8 Switching Characteristics
Fig.9 Dynamic Input Characteristics
3/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0
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