DMN3065LW
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V
(BR)DSS
30V
R
DS(ON)
52mΩ @ V
GS
= 10V
65mΩ @ V
GS
= 4.5V
85mΩ @ V
GS
= 2.5V
Package
SOT323
I
D max
T
A
= +25°C
4A
Features
•
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
•
•
•
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Mechanical Data
•
•
•
•
•
•
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.006 grams (approximate)
SOT323
D
D
G
G
Top View
S
S
Pin Configuration
Top View
Equivalent CircuitI
Ordering Information
(Note 4)
Part Number
DMN3065LW-7
DMN3065LW-13
Notes:
Case
SOT323
SOT323
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
N35 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
N35
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
Feb
2
2013
A
Mar
3
Apr
4
YM
2014
B
2015
C
Jun
6
Jul
7
2016
D
Aug
8
Sep
9
2017
E
Oct
O
Nov
N
2018
F
Dec
D
May
5
DMN3065LW
Document number: DS36078 Rev. 5 - 2
1 of 5
www.diodes.com
April 2014
© Diodes Incorporated
DMN3065LW
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Body-Diode Continuous Current (Note 5)
Symbol
V
DSS
V
GSS
I
D
I
S
Value
30
±12
4
1
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
@T
A
= +25°C (Note 5)
Symbol
P
D
R
θJA
T
J,
T
STG
Value
770
162
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS(7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
=10V)
Total Gate Charge (V
GS
=4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
Ciss
Coss
Crss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
30
⎯
⎯
0.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
⎯
1
±100
1.5
52
65
85
1.2
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 4A
V
GS
= 4.5V, I
D
= 3A
V
GS
= 2.5V, I
D
= 2A
V
GS
= 0V, I
S
= 2.0A
⎯
465
49.5
43.8
2.3
11.7
5.5
1.1
1.8
1.9
1.6
10.3
2.0
VDS = 15V, VGS = 0V, f =
1.0MHz
V
DS
=0V, V
GS
= 0V, f = 1MHz
V
DS
= 15V, I
D
= 4 A
V
DS
= 15V, I
D
= 4 A
V
DD
= 15V, V
GEN
= 10V,
R
GEN
=3Ω, R
L
= 3.75Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMN3065LW
Document number: DS36078 Rev. 5 - 2
2 of 5
www.diodes.com
April 2014
© Diodes Incorporated
DMN3065LW
10.0
V
GS
= 10V
20
18
V
DS
= 5.0V
8.0
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5V
16
I
D
, DRAIN CURRENT (A)
14
12
10
8
6
4
2
V
GS
= 1.5V
6.0
V
GS
= 3.5V
V
GS
= 3.0V
4.0
V
GS
= 2.5V
V
GS
= 2.0V
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= -55°C
2.0
T
A
= 25°C
0.0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0
0
1
2
3
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
V
GS
= 4.5V
4
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
1
0.08
0.07
0.06
0.05
0.04
0.03
T
A
= -55°C
T
A
= 125°C
T
A
= 150°C
T
A
= 85°C
0.1
V
GS
= 2.5V
T
A
= 25°C
V
GS
= 4.5V
0.02
0.01
0
0
8
12
16
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
4
20
V
GS
= 10V
0.01
1
3
5
7
9
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
V
GS
= 10V
I
D
= 6A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
2
0.1
0.08
V
GS
= 2.5V
I
D
= 2A
V
GS
= 4.5V
I
D
= 3A
0.06
V
GS
= 4.5V
I
D
= 3A
V
GS
= 2.5V
I
D
= 2A
0.04
V
GS
= 10V
I
D
= 6A
0.02
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 5 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
DMN3065LW
Document number: DS36078 Rev. 5 - 2
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April 2014
© Diodes Incorporated
DMN3065LW
2
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
20
18
1.6
16
I
S
, SOURCE CURRENT (A)
14
12
10
8
6
4
2
T
A
= 25°C
1.2
I
D
= 1mA
0.8
I
D
= 250µA
0.4
75 100 125 150
-25
0
25
50
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
1,000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
0
-50
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
V
GS
GATE THRESHOLD VOLTAGE (V)
8
V
DS
= 15V
I
D
= 4A
6
100
C
oss
C
rss
4
2
f = 1MHz
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
30
0
0
2
4
6
8
10
Q
g
, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
12
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
G
H
K
M
J
D
L
SOT323
Dim
Min
Max
Typ
A
0.25
0.40
0.30
B
1.15
1.35
1.30
C
2.00
2.20
2.10
D
-
-
0.65
G
1.20
1.40
1.30
H
1.80
2.20
2.15
J
0.0
0.10
0.05
K
0.90
1.00
1.00
L
0.25
0.40
0.30
M
0.10
0.18
0.11
0°
8°
-
α
All Dimensions in mm
DMN3065LW
Document number: DS36078 Rev. 5 - 2
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April 2014
© Diodes Incorporated
DMN3065LW
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.8
X
0.7
Y
0.9
C
E
1.9
1.0
X
E
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
DMN3065LW
Document number: DS36078 Rev. 5 - 2
5 of 5
www.diodes.com
April 2014
© Diodes Incorporated
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