DMN7022LFG
75V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
ADVANCE INFORMATION
NEW PRODUCT
V
(BR)DSS
75V
R
DS(ON)
max
22mΩ @ V
GS
= 10V
28mΩ @ V
GS
= 4.5V
I
D
max
T
A
= +25°C
7.8A
6.9A
Features and Benefits
•
•
•
•
•
•
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
•
•
•
•
•
•
Case: POWERDI 3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
⎯
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
®
POWERDI 3333-8
S
Pin 1
S
S
G
®
D
G
D
D
D
D
Bottom View
Top View
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMN7022LFG-7
DMN7022LFG-13
Notes:
Case
®
POWERDI 3333-8
®
POWERDI 3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
YYWW
N72= Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 13 = 2013)
WW = Week code (01 ~ 53)
N72
POWERDI is a registered trademark of Diodes Incorporated.
DMN7022LFG
Document number: DS37008 Rev. 1 - 2
1 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN7022LFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
NEW PRODUCT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
t<10s
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 6)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
75
±20
7.8
6.2
10.5
8.4
56
2.1
28.8
42.2
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
Symbol
P
D
R
θ
JA
P
D
R
θ
JA
R
θ
JC
T
J,
T
STG
Value
0.9
125
67
2
62
34
6.9
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
75
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
14.6
20.5
0.72
2737
126
96.1
0.89
26.4
56.5
12
11.8
6.1
5.7
19.6
3.9
26.2
25.2
Max
—
1
±100
3
22
28
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 75V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 7.2A
V
GS
= 4.5V, I
D
= 6.4A
V
GS
= 0V, I
S
= 3.2A
V
DS
= 35V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 38V, I
D
= 7.2A
V
GS
= 10V, V
DS
= 38V,
R
G
= 1Ω, I
D
= 5.7A
I
F
= 5.7A, di/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMN7022LFG
Document number: DS37008 Rev. 1 - 2
2 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN7022LFG
30.0
V
GS
= 4.5V
V
GS
= 5.0V
V
GS
= 6.0V
V
GS
= 8.0V
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1.5
V
DS
= 5.0V
25.0
ADVANCE INFORMATION
NEW PRODUCT
I
D
, DRAIN CURRENT (A)
20.0
V
GS
= 10V
15.0
V
GS
= 4.0V
I
D
, DRAIN CURRENT (A)
10.0
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
5.0
V
GS
= 3.5V
0.0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
2
2.5
3
3.5
4
4.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
I
D
= 7.2A
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.045
0.04
0.035
0.03
0.025
0.02
V
GS
= 10V
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.05
0.028
0.026
0.024
0.022
0.02
0.018
0.016
0.014
0.012
0.01
2
6
8
10 12 14 16 18 20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
4
I
D
= 6.4A
0.015
0.01
0.005
0
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
V
GS
= 10V
30
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
2
6
8 10 12 14 16 18
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
4
20
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
2.4
2.2
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
V
GS
= 4.5V
I
D
= 6.4A
V
GS
= 10 V
I
D
= 7.2A
T
A
= 85°C
T
A
= -55°C
POWERDI is a registered trademark of Diodes Incorporated.
DMN7022LFG
Document number: DS37008 Rev. 1 - 2
3 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN7022LFG
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.045
3
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
I
D
= 250µA
I
D
= 1mA
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= 10V
I
D
= 7.2A
V
GS
= 4.5V
I
D
= 6.4A
ADVANCE INFORMATION
NEW PRODUCT
1
-50
30
27
24
I
S
, SOURCE CURRENT (A)
21
18
15
12
9
6
3
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
1000
C
oss
100
C
rss
f = 1MHz
0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
V
GS
GATE THRESHOLD VOLTAGE (V)
10
0
5
10
15
20
25
30
35
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
R
DS(on)
Limited
40
100
8
10
I
D
, DRAIN CURRENT (A)
DC
6
V
DS
= 38V
I
D
= 7.2A
1
P
W
= 10s
P
W
= 1s
4
0.1
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
2
0.01
0
0
6
12 18 24 30 36 42 48 54
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
60
0.001
0.1
T
J(max)
= 150°C
T
A
= 25°C
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
P
W
= 100µs
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated.
DMN7022LFG
Document number: DS37008 Rev. 1 - 2
4 of 6
www.diodes.com
July 2014
© Diodes Incorporated
DMN7022LFG
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
ADVANCE INFORMATION
NEW PRODUCT
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 124°C/W
Duty Cycle, D = t1/ t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
100
1000
0.001
0.0001
0.001
Package Outline Dimensions
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
POWERDI 3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2
2.22 2.32 2.27
E2
1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
®
A
A1
D
D2
A3
Pin 1 ID
E
E2
1
4
L
(4x)
b2
(4x)
8
5
L1
(3x)
Z (4x)
e
b (8x)
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Y2
8
G1
5
Y1
Y
1
Y3
X2
C
4
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
POWERDI is a registered trademark of Diodes Incorporated.
DMN7022LFG
Document number: DS37008 Rev. 1 - 2
5 of 6
www.diodes.com
July 2014
© Diodes Incorporated
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