DMP210DUFB4
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
5Ω @ V
GS
= -4.5V
7Ω @ V
GS
= -2.5V
10Ω @ V
GS
= -1.8V
15Ω @ V
GS
= -1.5V
I
D
T
A
= +25°C
-200mA
-170mA
-140mA
-50mA
Features and Benefits
P-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage V
GS(TH)
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surfaced Mount Package
Ultra-Low Package Profile, 0.4mm Maximum Package Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
-20V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.001 grams (Approximate)
X2-DFN1006-3
D
G
S
D
G
Gate Protection
Diode
ESD protected
Bottom View
S
Top View
Internal Schematic
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP210DUFB4-7
DMP210DUFB4-7B
Notes:
Case
X2-DFN1006-3
X2-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
1 of 7
www.diodes.com
August 2015
© Diodes Incorporated
DMP210DUFB4
Marking Information
N1
Top View
Dot Denotes Drain Side
From date code 1527 (YYWW),
this changes to:
N1
Top View
Bar Denotes Gate and Source Side
DMP210DUFB4-7
N1
N1
N1
Top View
Bar Denotes Gate and Source Side
N1 = Part Marking Code
DMP210DUFB4-7B
N1
N1
N1
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
2 of 7
www.diodes.com
N1
N1
N1
N1
August 2015
© Diodes Incorporated
DMP210DUFB4
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= -4.5V
Continuous Drain Current (Note 5) V
GS
= -1.8V
Pulsed Drain Current
Steady
State
Steady
State
T
P
= 10µs
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
-20
±10
-200
-160
-140
-110
-600
Units
V
V
mA
mA
mA
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J,
T
STG
Value
350
357
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
(Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 6)
Gate Threshold Voltage
Gate Threshold Voltage (Note 7)
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
Min
-20
Typ
Max
-100
-50
100
1
10
Unit
V
nA
nA
nA
µA
µA
V
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -16V, V
GS
= 0V
V
DS
= -5.0V, V
GS
= 0V
V
GS
=
5.0V,
V
DS
= 0V
V
GS
=
8.0V,
V
DS
= 0V
V
GS
=
10.0V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -100mA
V
GS
= -2.5V, I
D
= -50mA
V
GS
= -1.8V, I
D
= -20mA
V
GS
= -1.5V, I
D
= -10mA
V
GS
= -1.2V, I
D
= -1mA
V
DS
= -10V, I
D
= -200mA
V
GS
= 0V, I
S
= -115mA
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
@T
J
= +25°C
@T
J
= 0°C
@T
J
= +85°C
@T
J
= +100°C
V
GS(th)
V
GS(th)
Static Drain-Source On-Resistance
R
DS(ON)
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
(Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 7)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
-0.5
-0.55
-0.40
-0.35
-0.5
20
200
13.72
4.01
2.34
7.7
19.3
25.9
31.5
-1.0
-1.05
-0.90
-0.85
5
7
10
15
-1.2
175
30
20
Ω
mS
V
pF
pF
pF
nS
V
GS
= -4.5V, V
DD
= -15V
I
D
= -180mA, R
G
= 2.0Ω
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
3 of 7
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August 2015
© Diodes Incorporated
DMP210DUFB4
0.6
V
GS
= -4.5V
0.6
0.5
0.5
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
0.4
0.4
0.3
V
GS
= -2.5V
0.3
0.2
V
GS
= -1.8V
0.2
0.1
V
GS
= -1.5V
V
GS
= -1.2V
0.1
V
DS
=5.0V
0
0
0.5
1
1.5
2
2.5
3
3.5
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 1 Typical Output Characteristics
4
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
100
10
9
8
7
6
5
4
3
2
1
0
0
V
GS
=4.5V
Ave R
DS(ON)
(R) @ 150
C
R
DS(ON)
(
) Ave @ V
GS
=1.5V
Ave R
DS(ON)
(R) @ 125
C
10
R
DS(ON)
(
) Ave @ V
GS
=1.8V
R
DS(ON)
(
) Ave @ V
GS
=2.5V
R
DS(ON)
(
) Ave @ V
GS
=4.5V
Ave R
DS(ON)
(R) @ 85
C
Ave R
DS(ON)
(R) @ 25
C
Ave R
DS(ON)
(R) @ -55
C
1
0.001
0.01
0.1
I
D
, DRAIN-SOURCE CURRENT
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
DS(ON)
(
)
@V
GS
=4.5V, I
D
=200mA
1
0.1
0.2
0.3
0.4
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
0.5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Normalized)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Normalized)
1.6
12
1.4
10
8
1.2
R
DS(ON)
(
)
@V
GS
=2.5V, I
D
=50mA
R
DS(ON)
(
)
@V
GS
=2.5V, I
D
=50mA
6
1
4
R
DS(ON)
(
)
@V
GS
=4.5V, I
D
=200mA
0.8
2
0
-50
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 5 On-Resisitance Variation with Temperature
-25
0
25
50
75 100 125
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 6 On-Resisitance vs.Temperature
150
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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August 2015
© Diodes Incorporated
DMP210DUFB4
1.4
0.6
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1.2
I
S
, SOURCE CURRENT (A)
0.5
1.0
I
D
= 1mA
0.4
T
A
= 25
C
0.8
0.6
0.4
0.2
0
-50
0.3
I
D
= 250
A
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
100
f = 1MHz
10,000
T
A
= 150
C
C
T
, JUNCTION CAPACITANCE (pF)
I
DSS
, LEAKAGE CURRENT (nA)
1,000
100
T
A
= 85
C
10
C
iss
10
T
A
= 25
C
C
oss
1
T
A
= -55
C
C
rss
1
0
8
12
16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
1
4
20
0.1
0
4
6
8 10 12 14 16 18 20
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
2
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
R
JA
(t) = r(t) * R
JA
R
JA
= 369°C/W
P(pk)
D = 0.02
0.01
D = 0.01
D = 0.005
t
1
D = Single Pulse
t
2
T
J
- T
A
= P * R
JA
(t)
Duty Cycle, D = t
1
/t
2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
10
100
1,000
DMP210DUFB4
Document number: DS35026 Rev. 11 - 2
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August 2015
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