DMP32D4S
30V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-30V
R
DS(on)
Max
2.4Ω @ V
GS
= -10V
4Ω @ V
GS
= -4.5V
I
D
Max
@T
A
= +25C
-300mA
-250mA
Features
Low On-Resistance
ESD Protected Gate to 2kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ADVANCE INFORMATION
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Weight: 0.006 grams (approximate)
Drain
Applications
Load Switch
Portable Applications
Power Management Functions
SOT23
D
Gate
G
S
Gate
Protection
Diode
Source
ESD PROTECTED
Top View
Top View
Pin-Out
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP32D4S-7
DMP32D4S-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P32S = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Z = 2012)
M = Month (ex: 9 = September)
P32S
Date Code Key
Year
Code
Month
Code
2012
Z
Jan
1
Feb
2
2013
A
Mar
3
Apr
4
YM
2014
B
2015
C
Jun
6
Jul
7
2016
D
Aug
8
Sep
9
2017
E
Oct
O
Nov
N
2018
F
Dec
D
May
5
DMP32D4S
Document number: DS35822 Rev. 4 - 2
1 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP32D4S
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6)
Pulsed Drain Current (Note 6)
V
GS
= -10V
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-30
±20
300
250
-1
Unit
V
V
mA
A
ADVANCE INFORMATION
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
370
540
348
241
91
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
Min
-30
—
—
-1.4
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
6
0.8
51.16
10.85
8.88
275
0.6
1.2
0.2
0.3
9.86
11.5
31.8
21.9
Max
—
-1
±10
-2.4
-2.0
2.4
4
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
Ω
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -1mA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±16V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -5V, I
D
= -1μA
V
GS
= -10V, I
D
= -0.3A
V
GS
= -4.5V, I
D
= -0.25A
V
DS
= -10V, I
D
= -400mA
V
GS
= 0V, I
S
= -300mA
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= -4.5V
V
DS
= -10V,
V
GS
= -10V I
D
= -1A
V
DS
= -15V, I
D
= -1A
V
GS
= -10V, R
G
= 6Ω
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP32D4S
Document number: DS35822 Rev. 4 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP32D4S
2.0
V
GS
= -10V
V
GS
= -5.0V
2.0
1.8
1.6
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.0V
V
DS
= -5.0V
-I
D
, DRAIN CURRENT (A)
1.5
V
GS
= -4.5V
1.4
1.2
1.0
0.8
0.6
0.4
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
ADVANCE INFORMATION
1.0
V
GS
= -3.5V
0.5
V
GS
= -3.0V
V
GS
= -2.5V
0.2
5
0
0
1
2
3
4
-V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
0
0
1
2
3
4
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1.0
1.5
2.0
2.5
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
3.0
V
GS
= -4.5V
V
GS
= -2.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.0
1.5
I
D
= -0.5A
1.2
I
D
= -0.3A
0.9
0.6
0.3
0
0
4
6
8 10 12 14 16 18 20
-V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.4
1.2
1.0
T
A
= 125
C
V
GS
= -4.5V
1.6
V
GS
= -10V
I
D
= -1.0A
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T
A
= 150
C
1.4
V
GS
= -4.5V
I
D
= -500mA
0.8
0.6
0.4
0.2
0
0
T
A
= 85
C
T
A
= 25
C
1.2
1.0
T
A
= -55
C
0.8
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
-I
D
, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMP32D4S
Document number: DS35822 Rev. 4 - 2
3 of 6
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November 2013
© Diodes Incorporated
DMP32D4S
R
DS(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
1.5
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
-50
-I
D
= 1mA
1.2
0.9
V
GS
= -4.5V
I
D
= -500mA
ADVANCE INFORMATION
0.6
V
GS
= -10V
I
D
= -1.0A
-I
D
= 250µA
0.3
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
2.0
1.8
-I
S
, SOURCE CURRENT (A)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
T
A
= 150
C
T
A
= 125
C
f = 1MHz
C
T
, JUNCTION CAPACITANCE (pF)
100
C
iss
10
C
oss
C
rss
T
A
= 85
C
T
A
= 25
C
T
A
= -55
C
1
0.3
0.6
0.9
1.2
1.5
-V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
0
5
10
15
20
25
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
10
-V
GS
, GATE-SOURCE VOLTAGE (V)
8
V
DS
= -10V
I
D
= -1A
6
4
2
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
1.4
DMP32D4S
Document number: DS35822 Rev. 4 - 2
4 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMP32D4S
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
ADVANCE INFORMATION
H
J
K
A ll 7 °
K 1
a
A
M
L
L 1
C
B
D
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMP32D4S
Document number: DS35822 Rev. 4 - 2
5 of 6
www.diodes.com
November 2013
© Diodes Incorporated
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