FQD2N60C / FQU2N60C N-Channel
QFET
®
MOSFET
FQD2N60C / FQU2N60C
N-Channel
QFET
®
MOSFET
600 V, 1.9 A, 4.7 Ω
Features
• 1.9 A, 600 V, R
DS(on)
= 4.7
Ω
(Max.)
@ V
GS
= 10 V,
I
D
= 0.95 A
• Low
Gate Charge
(Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100%
Avalanche Tested
•
RoHS Compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Corise Semiconductorÿs proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
D
G
S
G
D
D
!
●
S
◀
G
!
▲
●
●
D-PAK
I-PAK
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
(Note 1)
Parameter
FQD2N60C / FQU2N60C
600
1.9
1.14
7.6
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C)*
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
120
1.9
4.4
4.5
2.5
44
0.35
-55 to +150
300
T
J
, T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case,
Max.
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient,
Max.
FQD2N60C / FQU2N60C
2.87
50
110
Unit
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
1
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FQD2N60C / FQU2N60C N-Channel
QFET
®
MOSFET
Device Marking
FQD2N60C
FDU2N60C
Device
FQD2N60C
FDU2N60C
Package
D-PAK
I-PAK
T
C
= 25°C unless otherwise noted
Reel Size
-
-
Tape Width
-
-
Quantity
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆BV
DSS
/
∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250
µA,
Referenced to 25°C
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
µA
V
GS
= 10 V, I
D
= 0.95 A
V
DS
= 40 V, I
D
= 0.95 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
(Note 4)
Min
600
--
--
--
--
--
2.0
--
--
--
--
--
Typ
--
0.6
--
--
--
--
--
3.6
5.0
180
20
4.3
9
25
24
28
8.5
1.3
4.1
--
--
--
230
1.0
Max
--
--
1
10
100
-100
4.0
4.7
--
235
25
5.6
28
60
58
66
12
--
--
1.9
7.6
1.4
--
--
Unit
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
On Characteristics
Dynamic Characteristics
Switching Characteristics
V
DD
= 300 V, I
D
= 2 A,
R
G
= 25
Ω
--
--
--
(Note 4, 5)
--
--
--
V
DS
= 480 V, I
D
= 2 A,
V
GS
= 10 V
(Note 4, 5)
--
--
--
--
--
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= 1.9 A
V
GS
= 0 V, I
S
= 2 A,
dI
F
/ dt = 100 A/µs
(Note 4)
--
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56mH, I
AS
= 2A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
3. I
SD
≤
2A, di/dt
≤
200A/µs, V
DD
≤
BV
DSS,
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
2
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FQD2N60C / FQU2N60C N-Channel
QFET
®
MOSFET
Figure 1. On-Region Characteristics
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
Figure 2. Transfer Characteristics
10
1
I
D
, Drain Current [A]
10
I
D
, Drain Current [A]
0
150 C
10
0
o
-55 C
25 C
o
o
10
-1
※
Notes :
1. 250µ s Pulse Test
2. T
C
= 25
℃
※
Notes :
1. V
DS
= 40V
2. 250µ s Pulse Test
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
12
R
DS(ON)
[Ω ],
Drain-Source On-Resistance
8
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
10
6
10
0
4
V
GS
= 20V
2
※
Note : T
J
= 25
℃
150
℃
25
℃
-1
※
Notes :
1. V
GS
= 0V
2. 250µ s Pulse Test
0
10
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
, Drain Current [A]
V
SD
, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
500
450
400
350
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 6. Gate Charge Characteristics
12
10
V
DS
= 120V
V
DS
= 300V
Capacitance [pF]
C
iss
C
oss
V
GS
, Gate-Source Voltage [V]
8
300
250
200
150
100
50
0
-1
10
0
1
V
DS
= 480V
6
C
rss
※
Notes ;
1. V
GS
= 0 V
2. f = 1 MHz
4
2
※
Note : I
D
= 2A
10
10
0
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
3
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FQD2N60C / FQU2N60C N-Channel
QFET
®
MOSFET
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
1.1
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
※
Notes :
1. V
GS
= 10 V
2. I
D
= 0.95 A
0.9
※
Notes :
1. V
GS
= 0 V
2. I
D
= 250 µA
0.5
0.8
-100
-50
0
50
100
o
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [ C]
T
J
, Junction Tem
perature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
2.0
10
1
Operation in This Area
is Limited by R
DS(on)
1.6
I
D
, Drain Current [A]
1 ms
10
0
I
D
, Drain Current [A]
3
100
µ
s
10 ms
100 ms
DC
1.2
0.8
10
-1
※
Notes :
o
1. T
C
= 25 C
o
2. T
J
= 150 C
3. Single Pulse
0.4
10
-2
10
0
10
1
10
2
10
0.0
25
50
75
100
125
150
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [
℃
]
Figure 11. Typical Drain Current Slope
vs. Gate Resistance
Figure 12. Typical Drain-Source Voltage
Slope vs. Gate Resistance
Z
θ
JC
(t), Thermal Response
D = 0 .5
10
0
0 .2
0 .1
0 .0 5
10
-1
※
N o te s :
1 . Z
θ
J C
( t) = 2 .8 7
℃
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
θ
J C
(t)
0 .0 2
0 .0 1
s in g le p u ls e
P
DM
t
1
t
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
4
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FQD2N60C / FQU2N60C N-Channel
QFET
®
MOSFET
Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
10V
Q
gs
Q
g
V
GS
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
V
DS
R
G
10V
V
GS
R
L
V
DD
V
DS
90%
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
10V
t
p
BV
DSS
1
---- L I
AS2
--------------------
E
AS
=
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
I
D
(t)
V
DD
t
p
DUT
V
DS
(t)
Time
5
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