Modes of Operation and Pin-outs ................................................................................................................................................ 6
Pin-out Top Views................................................................................................................................................................. 6
Test Circuit Diagrams for LVCMOS and Clipped Sinewave Outputs ........................................................................................... 7
Frequency Stability ............................................................................................................................................................. 11
Output frequency and format .............................................................................................................................................. 11
Output Frequency Tuning ................................................................................................................................................... 11
Pin 1 Configuration (OE, VC, or NC) .................................................................................................................................. 12
Control Voltage Bandwidth ................................................................................................................................................. 15
Pull Range, Absolute Pull Range ............................................................................................................................................... 16
I
2
C Control Registers ................................................................................................................................................................. 21
Register Address: 0x00. Digital Frequency Control Least Significant Word (LSW) ............................................................ 21
Register Address: 0x01. OE Control, Digital Frequency Control Most Significant Word (MSW) ......................................... 22
Register Address: 0x02. DIGITAL PULL RANGE CONTROL ............................................................................................ 23
Register Address: 0x05. PULL-UP DRIVE STRENGTH CONTROL .................................................................................. 24
Register Address: 0x06. PULL-DOWN DRIVE STRENGTH CONTROL ............................................................................ 25
Serial Interface Configuration Description.................................................................................................................................. 26
Serial Signal Format .................................................................................................................................................................. 26
Parallel Signal Format................................................................................................................................................................ 27
Parallel Data Format .................................................................................................................................................................. 27
I
2
C Timing Specification ............................................................................................................................................................. 29
I
2
C Device Address Modes ........................................................................................................................................................ 30
Schematic Example ................................................................................................................................................................... 31
Dimensions and Patterns ........................................................................................................................................................... 32
Ordering Information .................................................................................................................................................................. 34
Rev 0.60
Page 2 of 36
www.sitime.com
SiT5357
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
Electrical Characteristics
PRELIMINARY
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and 3.3V Vdd
Table 1. Output Characteristics
Parameters
Output Frequency Range
Duty Cycle
Rise/Fall Time
Output Voltage High
Output Voltage Low
Output Voltage Level
Frequency Stability over Temperature
Frequency vs. Temperature Slope
Dynamic Frequency Change to
Temperature Ramp
Initial Tolerance
24-hour holdover stability
Hysteresis Over Temperature
Symbol
F
DC
Tr, Tf
VOH
VOL
V_out
F_stab
ΔF/ΔT
F_dynamic
F_init
F_24_Hold
F_hys
Min.
60.000001
45
–
90%
–
0.8
-0.1
–
–
-1
-0.28
–
–
–
Supply Voltage Sensitivity
Output Load Sensitivity
One-Day Aging
One-Year Aging
20-Year Aging
Frequency Stability over Temperature
Frequency vs. Temperature Slope
Dynamic Frequency Change during
Temperature Ramp
Initial Tolerance
24-hour holdover
Supply Voltage Sensitivity
Output Load Sensitivity
One-Day Aging
One-Year Aging
20-Year Total Stability
Start-up Time
First Pulse Accuracy
F_Vdd
F_load
F_1d
F_1y
F_20y
F_stab
ΔF/ΔT
F_dynamic
F_init
F_24_Hold
F_Vdd
F_load
F_1d
F_1y
F_20y
T
T_start
T_stability
–
–
–
–
–
–
-0.2
0.25
–
–
-1
-0.32
–
–
–
–
–
-4.6
–
–
±2.5
±2
±1
±3
±1
–
5
10
Typ.
–
–
1
–
–
–
–
±2.5
±0.021
–
–
±15
±15
±10
±2.5
±1
±1
±3
±0.5
±1
–
–
±8
±0.07
–
Max.
220
55
–
–
10%
1.2
+0.1
–
–
+1
+0.28
–
–
–
–
–
–
–
–
–
+0.2
+0.25
–
–
+1
+0.32
–
–
–
–
–
+4.6
–
–
Unit
MHz
%
ns
Vdd
Vdd
V
ppm
ppb/°C
ppb/s
ppm
ppm
ppb
ppb
ppb
ppb
ppb
ppb
ppb
ppm
ppm
ppm
ppm
ppb/°C
ppb/s
ppm
ppm
ppb
ppb
ppb
ppb
ppm
ppm
ms
ms
0.5C/min temperature ramp rate
Initial frequency at 25°C inclusive of solder-down
shift at 48 hours after 2 reflows
Per Stratum 3 definition
Vdd ±5%
LVCMOS output, 15 pF ±10%
Clipped sinewave output, 10kΩ, 10 pF ±10%
After 30-days of continued operation
At 25°C
Stratum 3 per GR-1244
Time to first pulse, measured from the time Vdd
reaches 90% of its final value
Time to first accurate pulse within rated stability,
measured from the time Vdd reaches 90% of its final
value
0.5C/min temperature ramp rate
Initial frequency at 25°C inclusive of solder-down shift
at 48 hours after 2 reflows
Per Stratum 3 definition
-40 to 105C
-40 to 85C
-20 to 70C
Vdd ±5%
LVCMOS output, 15 pF ±10%
Clipped sinewave output, 10kΩ, 10 pF ±10%
After 30-days of continued operation
At 25°C
At 25°C
Referenced to (fmax + fmin)/2 over the specified
temperature range
10% - 90% Vdd
I
OH
= -6 mA, (Vdd = 3.3 V, 3.0 V, 2.8 V, 2.5 V)
I
OL
= 6 mA, (Vdd = 3.3 V, 3.0 V, 2.8 V, 2.5 V)
Measured peak-to-peak swing at any Vdd
Referenced to (max frequency + minimum
frequency)/2 over the specified temperature range
Condition
Frequency Coverage
LVCMOS Output Characteristics
Clipped Sinewave Output Characteristics
Frequency Stability - Stratum 3+ Grade
Frequency Stability - Stratum 3 Grade
Start-up Characteristics
Rev 0.60
Page 3 of 36
www.sitime.com
SiT5357
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
Table 2. DC Characteristics
Parameters
Supply Voltage
Symbol
Vdd
Min.
2.25
2.52
2.7
2.97
Current Consumption
OE Disable Current
Operating Temperature Range
IDD
I_od
T_use
–
–
-20
-40
-40
Typ.
2.5
2.8
3.0
3.3
Max.
2.75
3.08
3.3
3.63
Unit
V
V
V
V
mA
mA
°C
°C
°C
PRELIMINARY
Condition
Contact
SiTime
for 2.25V to 3.63V continuous supply
voltage support
Supply Voltage
Current Consumption
–
45
44.5
–
–
–
–
Temperature Range
+70
+85
+105
F = 98.304 MHz, No Load
OE = GND, output is weakly pulled down
Extended Commercial
Industrial. Contact
SiTime
for 105
°C
support
Extended Industrial
Table 3. Input Characteristics
Parameters
Input Impedance
Input High Voltage
Input Low Voltage
Pull Range
PR
Symbol
Z_in
VIH
VIL
Min.
–
70
–
Typ.
100
–
–
Max.
–
–
30
Unit
kΩ
%
%
Internal pull up to Vdd
Condition
Input Characteristics
–
OE Pin
Frequency Tuning Range – Voltage Control or I
2
C mode
±6.25, ±10, ±12.5, ±25, ±50, ±80,
±100, ±125, ±150, ±200, ±400,
±600, ±800, ±1200, ±1600,
±3200
90%
–
10
–
Positive
–
2
ppm
Voltage Control Characteristics
Upper Control Voltage
Lower Control Voltage
Control Voltage Input Impedance
Control Voltage Input Bandwidth
Frequency Change Polarity
Pull Range Linearity
Input Voltage Low
Input Voltage High
Output Voltage Low
Output Current High
Leakage in high impedance mode
Input Hysteresis
Input Capacitance
Rise Time
Fall Time
VIL
VIH
VOL
IOL
I_leak
V_hys
C_in
Tr
Tf
VC_U
VC_L
VC_z
VC_c
–
–
–
10
0.5
–
–
–
–
–
–
–
–
–
–
–
–
10%
–
–
–
0.3
–
0.4
–
24
0.4
0.3
3
120
60
75
Vdd
Vdd
MΩ
kHz
%
V
V
V
mA
µA
V
V
pF
ns
ns
ns
Vdd = 3.3V, 30% to 70%
Vdd = 2.5V, 30% to 70%
0.1 Vdd< VOUT < 0.9 Vdd
Vdd = 3.3V
Vdd = 2.5V
Contact
SiTime
for other input bandwidth options
I C Interface Characteristics, 1 MHz, 200 Ohm, 550 pF (Max I
2
C Bus Load)
–
0.7
–
21
5.5
0.2
0.2
–
–
30
40
Rev 0.60
Page 4 of 36
www.sitime.com
SiT5357
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
Table 4. Jitter & Phase Noise
Parameters
RMS Phase Jitter (random)
T_phj
–
Spurs
RMS Period Jitter
Peak Cycle-to-Cycle Jitter
1 Hz offset
10 Hz offset
100 Hz offset
1 kHz offset
10 kHz offset
100 kHz offset
1 MHz offset
5 MHz offset
T_jitt
T_jitt_cc
–
–
–
–
–
–
–
–
–
–
–
0.30
-94
2
10
-54
-82
-104
-126
-132
-135
-149
-155
–
–
–
–
Phase Noise
–
–
–
–
–
–
–
–
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
ps
dBc
ps
ps
Symbol
Min.
Typ.
Max.
Jitter
–
0.30
–
ps
Unit
PRELIMINARY
Condition
f = 98.304 MHz, Integration bandwidth = 12 kHz to 20
MHz
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20
MHz
f = 98.304 MHz, 12 kHz to 5 MHz offsets
f = 98.304 MHz per JESD65 standard
f = 98.304 MHz per JESD65 standard
f = 98.304 MHz, TCXO and DCTCXO modes, and
VCTCXO mode with ±6.25 ppm pull range
Table 5. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Continuous Power Supply Voltage Range (Vdd)
Human Body Model (HBM) ESD Protection
Soldering Temperature (follow standard Pb-free
soldering guidelines)
Junction Temperature
[1]
Note:
1. Exceeding this temperature for an extended period of time may damage the device.
I would like to ask you, in the pin constraints of cyclone 10, there are many options in the assignment name. How do I use them? If the input is a differential clock, how do I make pin constraints?...
I am planning to build a card reader project. I have read a lot of introductions to 232 chips, but they are all about the use of chips, not 232. MAX232 has RXD and TXD pins, how can I send and receive...
As shown in the figure, don't worry about the value of the resistor in the figure. Some irrelevant peripheral circuits are not drawn. The purpose of this circuit is to control the current size of the ...
[b]Download address[/b] [b][url=http://www.studydz.com/download/EDAsheji/PCByuanlitu/2008-08-04/185.html][b]PSpice 9.1 Student Versi Circuit Simulation Software[/b][/url][/b] PSPICE is a general circu...
1. Several nouns
ABI:
The specifications that an executable file must follow in order to run in a specific execution environment;
Separately generated relocatabl...[Details]
Whether it is an electric car or an ordinary fuel car, for the vast majority of car buyers, the final cost of use is what they care about most. For fuel cars, how to save fuel is what drivers care ...[Details]
New energy pure electric vehicles generally accelerate faster than comparable fuel-powered vehicles, both from a standing start and while accelerating. Many believe this is simply due to the motor'...[Details]
1. Introduction
Electronic scales are gradually replacing traditional measuring tools like springs and balances in everyday life, such as electronic price computing scales and electronic weigh...[Details]
According to foreign media reports, secondary battery materials company POSCO Future M announced that it has successfully developed two experimental (prototype) positive electrode materials for the...[Details]
Robotics
has become
LiDAR
's "second growth curve."
While LiDAR was still battling with its "pure vision" rivals in the automotive field, another field ignited the demand f...[Details]
Based on a survey of more than ten intelligent robot companies, this article sorts out and analyzes the current development status of the intelligent industry and the challenges and differences it ...[Details]
The all-new MG4 was recently officially announced on the Ministry of Industry and Information Technology's (MIIT) new vehicle announcement. The all-new MG4's semi-solid-state battery version addres...[Details]
This paper proposes a temperature real-time transmission and display solution based on LED optical data transmission, with Jingwei Yager low-power FPGA HR (Yellow River) series as the main controll...[Details]
As AI accelerates across industries, the demand for data center infrastructure is also growing rapidly.
Keysight Technologies, in collaboration with Heavy Reading, released the "Beyo...[Details]
According to Nikkei, Japan has performed poorly in responding to China's power semiconductor challenges.
There are five major companies in Japan's power chip market: Mitsubishi Electric,...[Details]
Chinese characters are extensive and profound, and there are many different names for ESD tubes. How many of them do you know?
As far as I know, ESD diodes are currently known as ESD p...[Details]
On August 21st, BYD announced the launch of its next-generation "Little White Pile" product, the "Lingchong"
charging
pile
, which is now available for general sale. This charging pile feat...[Details]
To improve the lateral active safety of intelligent connected vehicles, the identification and definition of unexpected functional safety scenarios for the EPS (Electronic Steering System) ...[Details]
The range of an electric vehicle is crucial to the driving experience, and range anxiety is a common headache when driving an electric vehicle. Although the latest electric vehicles can achieve a r...[Details]