VN2410
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
►
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven, silicon-
gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Applications
►
►
►
►
►
►
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN2410
Package Option
TO-92
VN2410L-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
240
10
1.0
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
SOURCE
GATE
TO-92 (L)
Product Marking
YYWW
Si VN
2410L
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (L)
Package may or may not include the following marks: Si or
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
VN2410
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
I
DRM
(A)
190
1.7
1.0
125
170
190
1.7
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
r
t
d(ON)
t
f
t
d(OFF)
V
SD
Parameter
A
= 25
O
C unless otherwise specified)
Min
240
0.8
-
-
Typ
-
-
-
-
-
-
-
-
1.0
-
-
-
-
-
-
-
-
1.2
Max
-
2.0
100
10
500
-
10
10
1.4
-
125
50
20
8.0
8.0
24
23
-
Units
V
V
nA
µA
A
Ω
%/
O
C
Conditions
V
GS
= 0V, I
D
= 100µA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= 120V
V
GS
= 0V, V
DS
= 120V,
T
A
= 125°C
V
GS
= 10V, V
DS
= 15V
V
GS
= 2.5V, I
D
= 100mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
Drain-to-source breakdown voltage
Gate threshold voltage
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Rise time
Turn-on delay time
Fall time
Turn-off delay time
Diode forward voltage drop
-
1.0
-
-
-
300
-
-
-
-
-
-
-
-
mmho V
DS
= 10V, I
D
= 500mA
pF
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
ns
V
DD
= 60V,
I
D
= 400mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 190mA
V
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
GEN
90%
10%
t
(ON)
INPUT
0V
R
L
OUTPUT
t
(OFF)
t
r
t
d(OFF)
t
f
t
d(ON)
V
DD
OUTPUT
0V
10%
90%
10%
90%
INPUT
D.U.T.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
VN2410
3-Lead TO-92 Package Outline (L)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2009
Supertex inc.
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VN2410
B120709
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
3
Supertex inc.
Embedded System
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