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FDMC7696_F065

Description
mosfet single pt7 N in mlp3.3x3.3 combo
Categorysemiconductor    Discrete semiconductor   
File Size276KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
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FDMC7696_F065 Overview

mosfet single pt7 N in mlp3.3x3.3 combo

FDMC7696_F065 Parametric

Parameter NameAttribute value
ManufactureFairchild Semiconduc
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Curre12 A
Rds On - Drain-Source Resistance14.5 mOhms
ConfiguratiSingle
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge22 nC
Maximum Operating Temperature+ 150 C
Pd - Power Dissipati25 W
Mounting StyleSMD/SMT
Package / CaseMLP-8 3.3x3.3
PackagingReel
Fall Time10 ns
Forward Transconductance - Mi45 S
Minimum Operating Temperature- 55 C
Rise Time10 ns
Factory Pack Quantity3000
Typical Turn-Off Delay Time19 ns
FDMC7696 N-Channel PowerTrench
®
MOSFET
November 2013
FDMC7696
N-Channel PowerTrench
®
MOSFET
30 V, 12 A, 11.5 mΩ
Features
Max r
DS(on)
= 11.5 mΩ at V
GS
= 10 V, I
D
= 12 A
Max r
DS(on)
= 14.5 mΩ at V
GS
= 4.5 V, I
D
= 10 A
High performance technology for extremely low r
DS(on)
Termination is Lead-free and RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance.This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
DC/DC Buck Converters
Notebook battery power management
Load Switch in Notebook
Top
Bottom
8
7
6
5
D D D D
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
1
2 3 4
G S S S
Pin 1
MLP 3.3x3.3
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
I
D
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25°C
T
A
= 25°C
(Note 1a)
(Note 3)
T
C
= 25°C
T
C
= 25°C
T
A
= 25°C
(Note 1a)
(Note 4)
Parameter
Ratings
30
±20
20
38
12
50
21
25
2.4
-55 to +150
mJ
W
°C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
5.0
53
°C/W
Package Marking and Ordering Information
Device Marking
FDMC7696
Device
FDMC7696
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMC7696 Rev.C9
1
www.fairchildsemi.com
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