Page Mode DRAM, 64KX1, 200ns, MOS, CDIP16
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Objectid | 1613660971 |
| package instruction | DIP, DIP16,.3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum access time | 200 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-XDIP-T16 |
| JESD-609 code | e0 |
| memory density | 65536 bit |
| Memory IC Type | PAGE MODE DRAM |
| memory width | 1 |
| Number of terminals | 16 |
| word count | 65536 words |
| character code | 64000 |
| Maximum operating temperature | 110 °C |
| Minimum operating temperature | -55 °C |
| organize | 64KX1 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP16,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 128 |
| Filter level | 38535Q/M;38534H;883B |
| Maximum slew rate | 0.055 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | MOS |
| Temperature level | OTHER |
| Terminal surface | Tin/Lead (Sn/Pb) - hot dipped |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
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