Edition 2008-07-03
Published by
Infineon Technologies AG
81726 München, Germany
©
Infineon Technologies AG 2009.
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BGA736L16 - Tri-Band HSDPA LNA
Table of Contents
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
2.9.1
2.9.2
2.10
2.10.1
2.10.2
2.11
2.11.1
2.12
2.13
2.14
2.15
2.16
2.17
2.18
2.19
2.20
2.21
2.22
2.23
2.24
2.25
2.26
2.27
2.28
2.29
3
3.1
3.2
3.3
3.4
4
4.1
4.2
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ESD Integrity . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Band Select / Gain Control Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Supply current characteristics;
T
A
= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Signal Characteristics;
T
A
= 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Measured RF Characteristics Low Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics UMTS Band V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Measured RF Characteristics UMTS Band VIII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Measured RF Characteristics Mid Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Measured RF Characteristics UMTS Band II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Measured RF Characteristics UMTS Band IV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Measured RF Characteristics High Band . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Measured RF Characteristics UMTS Band I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Measured Performance Low Band High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Measured Performance Low Band High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 16
Measured Performance Low Band Mid Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Measured Performance Low Band Mid Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 19
Measured Performance Low Band Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Measured Performance Low Band Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 21
Measured Performance Mid Band High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Measured Performance Mid Band High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 24
Measured Performance Mid Band Mid Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Measured Performance Mid Band Mid Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 26
Measured Performance Mid Band Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Measured Performance Mid Band Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 29
Measured Performance High Band High Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . 30
Measured Performance High Band High Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . 31
Measured Performance High Band Mid Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Measured Performance High Band Mid Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 34
Measured Performance High Band Low Gain Mode vs. Frequency . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Measured Performance High Band Low Gain Mode vs. Temperature . . . . . . . . . . . . . . . . . . . . . . . . 36
Application Circuit and Block Diagram
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands I, II and V Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
UMTS bands I, IV and VIII Application Circuit Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pin Definition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Application Board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
38
38
39
40
41
Physical Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Package Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Data Sheet
4
V2.1, 2008-07-03
BGA736L16 - Tri-Band HSDPA LNA
Description
1
Description
The BGA736L16 is a highly flexible, tri-gain mode, and tri-band (2100, 1900/2100, 800/900 MHz) MMIC low noise
amplifier for worldwide use. Based on Infineon’s proprietary and cost-effective SiGe:C technology, the BGA736L16
features dynamic gain control, temperature stabilization, standby mode, and 2 kV ESD protection on-chip and
matching off chip.
While two gain modes are common in W-CDMA systems, a third gain mode has been introduced to reduce the
LNA gain just enough to pass adjacent channel tests without compromising on HSDPA performance. The
1900 MHz path can be converted into a 2100 MHz path and vice versa by optimizing the input matching and using
an additional external output matching network. This document specifies device performance for the band
combinations - UMTS bands I / II / V and UMTS bands I / IV / VIII.
Features
• Gain: 16 / 3 / -8 dB in high / mid / low gain mode
• Noise figure: 1.1 dB in high gain mode
• Supply current: 5.3 / 5.3 / 0.85 mA in high / mid / low gain modes
• Standby mode current consumption < 2
µA
• Outputs internally matched to 50
Ω
• 2 kV HBM ESD protection
• Low external component count
• Small leadless TSLP-16-1 package (2.3 x 2.3 x 0.39 mm)
• Pb-free (RoHS compliant) package
TSLP-16-1 package
Figure 1
Block diagram of triple-band LNA
Type
BGA736L16
Data Sheet
Package
PG-TSLP-16-1
Marking
BGA736
5
Chip
T1540
V2.1, 2008-07-03
FPGA/CPLD
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