VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
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Vishay Semiconductors
AAP Gen 7 (TO-240AA)
Power Modules Standard Diodes, 80 A
FEATURES
• High voltage
• Industrial standard package
• Low thermal resistance
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
AAP
Gen
7 (TO-240AA)
BENEFITS
PRIMARY CHARACTERISTICS
I
F(AV)
Type
Package
Circuit configuration
80 A
Modules - Diode, High Voltage
AAP Gen 7 (TO-240AA)
Two diodes doubler circuit, two
diodes common cathode, two diodes
common anode, single diode
• Excellent thermal performances obtained by the usage of
exposed direct bonded copper substrate
• Up to 1600 V
• High surge capability
• Easy mounting on heatsink
ELECTRICAL DESCRIPTION
MECHANICAL DESCRIPTION
The AAP Gen 7
(TO-240AA)
, new generation of AAP module,
combines the excellent thermal performances obtained by
the usage of exposed direct bonded copper substrate, with
advanced compact simple package solution and simplified
internal structure with minimized number of interfaces.
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
t
V
RRM
T
Stg
, T
J
Range
50 Hz
60 Hz
50 Hz
60 Hz
T
C
CHARACTERISTICS
VALUES
80
110
126
1500
1570
11.25
10.26
112.5
400 to 1600
-40 to +150
kA
2
s
kA
2
s
V
°C
A
UNITS
A
°C
Revision: 05-Jan-18
Document Number: 94626
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
08
VS-VSK.71
10
12
14
16
V
RRM
, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
V
400
600
800
1000
1200
1400
1600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
700
900
1100
1300
1500
1700
10
I
RRM
MAXIMUM
AT T
J
= 150 °C
mA
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
t = 10 ms
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
TEST CONDITIONS
180° conduction, half sine wave
VALUES
80
110
126
1500
1570
1260
1320
11.25
10.26
7.95
7.23
112.5
0.73
0.83
3.22
m
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
FM
=
x I
F(AV)
, T
J
= 25 °C, t
p
= 400 μs square wave
2.89
1.6
V
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
= T
J
maximum
BLOCKING
PARAMETER
Maximum peak reverse
leakage current
Maximum RMS insulation voltage
SYMBOL
I
RRM
V
INS
T
J
= 150 °C
50 Hz
TEST CONDITIONS
VALUES
10
3000 (1 min)
3600 (1 s)
UNITS
mA
V
Revision: 05-Jan-18
Document Number: 94626
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction and storage temperature range
Maximum internal thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink per module
to heatsink
Mounting torque ± 10 %
busbar
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
TEST CONDITIONS
VALUES
-40 to +150
0.28
°C/W
0.1
4
3
75
2.7
JEDEC
®
Nm
g
oz.
UNITS
°C
Approximate weight
Case style
AAP Gen 7 (TO-240AA)
R
CONDUCTION PER JUNCTION
DEVICES
VSK.71
SINE HALF WAVE CONDUCTION
180°
0.075
120°
0.088
90°
0.113
60°
0.155
30°
0.228
180°
0.06
RECTANGULAR WAVE CONDUCTION
120°
0.094
90°
0.12
60°
0.158
30°
0.23
UNITS
°C/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 05-Jan-18
Document Number: 94626
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
www.vishay.com
Vishay Semiconductors
Maximum average forward power loss (W)
Maximum allowable case temperature (°C)
150
RthJC (DC) = 0.28°C/W
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100 120 140
Average forward current (A)
Per leg, Tj = 150°C
140
130
120
110
100
90
0
20
40
60
80
100
Average forward current (A)
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
DC
RMS limit
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Foward Power Loss Characteristics
Maximum allowable case temperature (°C)
150
Peak half sine wave forward current (A)
RthJC (DC) = 0.28°C/W
1400
At any rated load condition and with
rated Vrrm applied following surge
Initial Tj = Tj max
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100s
140
130
120
110
100
90
0
20
40
60
80
100 120 140
Average forward current (A)
DC
180°
120°
90°
60°
30°
1200
1000
800
600
Per leg
400
1
10
100
Number of equal amplitude half cycle current pulses (N)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Maximum average forward power loss (W)
120
Peak half sine wave forward current (A)
1600
180°
120°
90°
60°
30°
100
80
60
40
20
1400
1200
1000
800
600
400
200
0.01
Maximum Non-repetitive Surge Current
Versus Pulse Train Duration
Initial Tj = 150°C
No Voltage Reapplied
Rated Vrrm reapplied
RMS limit
Per leg
Per leg, Tj = 150°C
0
0
10 20 30 40 50 60 70 80 90
Average forward current (A)
0.1
Pulse train duration (s)
1
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 05-Jan-18
Document Number: 94626
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSKD71.., VS-VSKE71.., VS-VSKJ71.., VS-VSKC71..
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160
Maximum total forward power loss (W)
Vishay Semiconductors
RthSA = 0.5 °C/W
0.7 °C/W
1 °C/W
1.5 °C/W
2 °C/W
3 °C/W
7 °C/W
140
120
100
80
60
40
20
0
0
20
40
60
80
VSK.71 Series
Per leg
Tj = 150°C
0
0
180°
(Sine)
0
DC
0
0
0
0
40
60
80 100 120 140 16
0
100 120 140
20
0
Total RMS output current (A)
Maximum allowable ambient temperature (°C)
Fig. 7 - Forward Power Loss Characteristics
600
Maximum total power loss (W)
500
400
300
200
100
0
0
50
180°
(sine)
180°
(rect)
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.5 °C/W
1 °C/W
2 °C/W
2 x VSK.71 Series
single phase bridge connected
Tj = 150°C
100
150
0
200
20
40
60
80 100 120 140 160
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig. 8 - Forward Power Loss Characteristics
600
Maximum total power loss (W)
500
400
300
200
100
0
0
50
100
150
200
20
0
40
60
3 x VSK.71 Series
three phase bridge connected
Tj = 150°C
120°
(rect)
RthSA = 0.1 °C/W
0.2 °C/W
0.3 °C/W
0.4 °C/W
0.7 °C/W
1.5 °C/W
80 100 120 140 160
Total output current (A)
Maximum allowable ambient temperature (°C)
Fig. 9 - Forward Power Loss Characteristics
Revision: 05-Jan-18
Document Number: 94626
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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