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VN0606L-G P013

Description
mosfet N-CH enhancmnt mode mosfet
Categorysemiconductor    Discrete semiconductor   
File Size342KB,3 Pages
ManufacturerSupertex
Environmental Compliance
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VN0606L-G P013 Overview

mosfet N-CH enhancmnt mode mosfet

VN0606L-G P013 Parametric

Parameter NameAttribute value
ManufactureSupertex
Product CategoryMOSFET
RoHSYes
Transistor PolarityN-Channel
Mounting StyleThrough Hole
Package / CaseTO-92-3
PackagingReel
Channel ModeEnhanceme
Factory Pack Quantity2000
VN0606
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven, silicon-
gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN0606
Package Options
TO-92
VN0606L-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
60
3.0
1.5
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±30V
-55
O
C to +150
O
C
300 C
O
DRAIN
SOURCE
GATE
TO-92 (L)
Product Marking
YYWW
Si VN
0606L
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level may Package may or may not include the following marks: Si or
affect device reliability. All voltages are referenced to device ground.
TO-92 (L)
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

VN0606L-G P013 Related Products

VN0606L-G P013 VN0606L-G VN0606L-G P014 VN0606L-G P002 VN0606L-G P005 VN0606L-G P003
Description mosfet N-CH enhancmnt mode mosfet mosfet 60v 3ohm mosfet N-CH enhancmnt mode mosfet mosfet N-CH enhancmnt mode mosfet mosfet N-CH enhancmnt mode mosfet mosfet N-CH enhancmnt mode mosfet
Manufacture Supertex - Supertex Supertex Supertex -
Product Category MOSFET - MOSFET MOSFET MOSFET -
RoHS Yes - Yes Yes Yes -
Transistor Polarity N-Channel - N-Channel N-Channel N-Channel -
Mounting Style Through Hole - Through Hole Through Hole Through Hole -
Package / Case TO-92-3 - TO-92-3 TO-92-3 TO-92-3 -
Packaging Reel - Reel Reel Reel -
Channel Mode Enhanceme - Enhanceme Enhanceme Enhanceme -
Factory Pack Quantity 2000 - 2000 2000 2000 -

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