AUTOMOTIVE GRADE
Features
l
Advanced Planar Technology
l
Low On-Resistance
l
Logic Level Gate Drive
l
Dynamic dV/dT Rating
l
175°C Operating Temperature
l
Fast Switching
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Fully Avalanche Rated
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Repetitive Avalanche Allowed up to Tjmax
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Lead-Free, RoHS Compliant
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Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance per
silicon area. This benefit combined with the fast switching
speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
AUIRLR3410
HEXFET
®
Power MOSFET
V
(BR)DSS
R
DS(on)
max.
I
D
D
S
D
100V
105mΩ
17A
G
S
D-Pak
AUIRLR3410
G
D
S
G
Gate
Drain
Source
Base Part Number
Package Type
AUIRLR3410
D-pak
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tape and Reel Left
3000
Tape and Reel Right
3000
Orderable Part Number
AUIRLR3410
AUIRLR3410TR
AUIRLR3410TRL
AUIRLR3410TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Max.
17
12
60
79
0.53
± 16
150
9.0
7.9
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Ãg
e
dg
g
Thermal Resistance
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
Parameter
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
°C/W
i
HEXFET
®
is a registered trademark of International Rectifier.
*Qualification
standards can be found at http://www.irf.com/
1
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2014 International Rectifier
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March 17, 2014
AUIRLR3410
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100
–––
–––
–––
–––
1.0
7.7
–––
–––
–––
–––
–––
–––
0.122 –––
––– 0.105
––– 0.125
––– 0.155
–––
2.0
–––
–––
–––
25
–––
250
–––
100
––– -100
Conditions
V V
GS
= 0V, I
D
= 250μA
V/°C Reference to 25°C, I
D
= 1mA
Ω
V
GS
= 10V, I
D
= 10A
V
GS
= 5.0V, I
D
= 10A
V
GS
= 4.0V, I
D
= 9.0A
V V
DS
= V
GS
, I
D
= 250μA
S V
DS
= 25V, I
D
= 9.0A
μA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
nA V
GS
= 16V
V
GS
= -16V
f
f
f
g
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.2
53
30
26
4.5
7.5
800
160
90
34
4.8
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= 9.0A
V
DS
= 80V
V
GS
= 5.0V
V
DD
= 50V
I
D
= 9.0A
R
G
= 6.0
Ω
V
GS
= 5.0V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
fg
fg
D
G
S
ns
nH
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
g
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
140
740
17
A
60
1.3
210
1100
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 9.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 9.0A
di/dt = 100A/μs
f
fg
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig.11 )
V
DD
= 25V, starting T
J
= 25°C, L = 3.1mH
R
G
= 25Ω, I
AS
= 9.0A. (See Figure 12)
I
SD
≤
9.0A, di/dt
≤
540A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRL530N data and test conditions.
This is applied for L
S
of D-PAK is measured between
When mounted on 1" square PCB (FR-4 or G-10
lead and center of die contact
Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
R
θ
is measured at Tj approximately 90°C.
2
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2014 International Rectifier
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March 17, 2014
AUIRLR3410
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
10
10
2.5V
1
1
2.5V
20μs PULSE WIDTH
T
J
= 25°C
1
10
0.1
0.1
100
A
0.1
0.1
20μs PULSE WIDTH
T
J
= 175°C
1
10
100
A
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
I
D
, Drain-to-Source Current (A)
T
J
= 25°C
T
J
= 175°C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 15A
2.5
2.0
1.5
1
1.0
0.5
0.1
2
3
4
5
6
V
DS
= 50V
20μs PULSE WIDTH
7
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
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AUIRLR3410
1400
1200
C, Capacitance (pF)
1000
C
iss
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
= 9.0A
12
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
800
9
600
C
oss
C
rss
6
400
3
200
0
1
10
100
A
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
50
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T
J
= 175°C
I
D
, Drain Current (A)
100
10
10μs
T
J
= 25°C
10
100μs
1
0.4
0.6
0.8
1.0
V
GS
= 0V
1.2
A
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
1ms
10ms
100
1.4
1000
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating
Area
4
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March 17, 2014
AUIRLR3410
20
V
DS
V
GS
R
D
I
D
, Drain Current (A)
15
R
G
5.0V
D.U.T.
+
-
V
DD
10
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
5
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0
25
50
T
C
, Case Temperature ( ° C)
75
100
125
150
175
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1 D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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March 17, 2014
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