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24AA024HT-I/MNY

Description
eeprom 2K 256 X 8 serial EE 1.8V ind 1/2array WP
Categorystorage    storage   
File Size367KB,29 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Download user manual Parametric Compare View All

24AA024HT-I/MNY Overview

eeprom 2K 256 X 8 serial EE 1.8V ind 1/2array WP

24AA024HT-I/MNY Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeDFN
package instructionHVSON,
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Factory Lead Time5 weeks
Maximum clock frequency (fCLK)0.1 MHz
JESD-30 codeR-PDSO-N8
JESD-609 codee4
length3 mm
memory density2048 bi
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level1
Number of functions1
Number of terminals8
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256X8
Package body materialPLASTIC/EPOXY
encapsulated codeHVSON
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height0.8 mm
Serial bus typeI2C
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formNO LEAD
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width2 mm
Maximum write cycle time (tWC)5 ms
Base Number Matches1
24AA024H/24LC024H
2K I
2
C
Serial EEPROM with Half-Array Write Protect
Device Selection Table
Part
Number
24AA024H
24LC024H
V
CC
Range
1.7V-5.5V
2.5V-5.5V
Max.
Clock
400 kHz
(1)
1 MHz
Temp.
Range
I
I, E
Description:
The Microchip Technology Inc. 24AA024H/24LC024H is
a 2 Kbit Serial Electrically Erasable PROM with
operation down to 1.7V. The device is organized as a
single block of 256 x 8-bit memory with a 2-wire serial
interface. Low-current design permits operation with
maximum standby and active currents of only 1
μA
and
400
μA,
respectively. The device has a page write
capability for up to 16 bytes of data. Functional address
lines allow the connection of up to eight 24AA024H/
24LC024H devices on the same bus for up to 16 Kbits
of contiguous EEPROM memory. The device is
available in the standard 8-pin PDIP, 8-pin SOIC (150
mil), TSSOP, 2x3 TDFN and MSOP packages.
Note 1:
100 kHz for V
CC
< 1.8V
Features:
• Single-Supply with Operation Down to 1.7V
• Low-Power CMOS Technology:
- 400
μA
active current, max.
- 1
μA
standby current, max.
• Organized as a Single Block of 256 Bytes
(256 x 8)
• 2-Wire Serial Interface Bus, I
2
C™ Compatible
• Schmitt Trigger Inputs for Noise Suppression
• Output Slope Control to Eliminate Ground Bounce
• 100 kHz and 400 kHz Compatibility
• 1 MHz Compatibility (LC)
• Page Write Buffer for up to 16 Bytes
• Self-Timed Write Cycle (including Auto-Erase)
• Hardware Write Protection for Half Array
(80h-FFh)
• Address Lines Allow up to Eight Devices on Bus
• 1 Million Erase/Write Cycles
• ESD Protection > 4,000V
• Data Retention > 200 Years
• Factory Programming (QTP) Available
• 8-pin PDIP, SOIC, TSSOP, TDFN and MSOP
Packages
• Available for Extended Temperature Ranges:
- Industrial (I):
- Automotive (E):
-40°C to
-40°C to
+85°C
+125°C
Block Diagram
A0 A1 A2
WP
HV Generator
Memory
Control
Logic
I/O
Control
Logic
XDEC
EEPROM
Array
SDA SCL
V
CC
V
SS
Write-Protect
Circuitry
YDEC
Sense Amp.
R/W Control
Package Types
PDIP, MSOP
A0
A1
A2
V
SS
1
2
3
4
8
7
6
5
V
CC
WP
SCL
A0
A1
A2
SOIC, TSSOP
1
2
3
4
8
7
6
5
V
CC
WP
SCL
SDA
• Pb-Free and RoHS compliant
SDA V
SS
TDFN
A0 1
A1 2
A2 3
V
SS
4
8 V
CC
7 WP
6 SCL
5 SDA
©
2008 Microchip Technology Inc.
DS22102A-page 1

24AA024HT-I/MNY Related Products

24AA024HT-I/MNY 24LC024HT-E/ST 24LC024HT-E/MNY
Description eeprom 2K 256 X 8 serial EE 1.8V ind 1/2array WP eeprom 2K 256 X 8 serial EE ext 1/2 array WP eeprom 2K 256 X 8 serial EE ext 1/2 array WP
Is it Rohs certified? conform to conform to conform to
Parts packaging code DFN SOIC DFN
package instruction HVSON, 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8 2 X 3 MM, 0.75 MM HEIGHT, ROHS COMPLIANT, PLASTIC, TDFN-8
Contacts 8 8 8
Reach Compliance Code compli compli compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 5 weeks 13 weeks 5 weeks
Maximum clock frequency (fCLK) 0.1 MHz 1 MHz 1 MHz
JESD-30 code R-PDSO-N8 R-PDSO-G8 R-PDSO-N8
JESD-609 code e4 e3 e4
length 3 mm 4.4 mm 3 mm
memory density 2048 bi 2048 bi 2048 bit
Memory IC Type EEPROM EEPROM EEPROM
memory width 8 8 8
Humidity sensitivity level 1 1 1
Number of functions 1 1 1
Number of terminals 8 8 8
word count 256 words 256 words 256 words
character code 256 256 256
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C -40 °C
organize 256X8 256X8 256X8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code HVSON TSSOP HVSON
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Parallel/Serial SERIAL SERIAL SERIAL
Peak Reflow Temperature (Celsius) 260 260 260
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 0.8 mm 1.2 mm 0.8 mm
Serial bus type I2C I2C I2C
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 1.7 V 2.5 V 2.5 V
Nominal supply voltage (Vsup) 1.8 V 4.5 V 4.5 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level INDUSTRIAL AUTOMOTIVE AUTOMOTIVE
Terminal surface Nickel/Palladium/Gold (Ni/Pd/Au) Matte Tin (Sn) - annealed Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal form NO LEAD GULL WING NO LEAD
Terminal pitch 0.5 mm 0.65 mm 0.5 mm
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature 40 40 40
width 2 mm 3 mm 2 mm
Maximum write cycle time (tWC) 5 ms 5 ms 5 ms
Base Number Matches 1 1 1

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