LY62W2568
Rev. 1.7
256K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Rev. 1.2
Rev. 1.3
Rev. 1.4
Rev. 1.5
Description
Initial Issue
Revised V
IH
to TTL compatible
Revised I
DR
(TYP.)
Revised V
IH
to 0.7*Vcc
Revised V
DR
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package available
Added packing type in
ORDERING INFORMATION
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Revised
PACKAGE OUTLINE DIMENSION
in page9/10/12/13
Revised
ORDERING INFORMATION
in page 14
Added SL Grade
Deleted E Grade
Revised I
SB1
/I
DR
Issue Date
Aug.1.2007
Jan.9.2008
Feb.22.2008
May.6.2008
Mar.3.2009
May.6.2010
Rev. 1.6
Rev. 1.7
Aug.30.2010
Aug.9.2011
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
LY62W2568
Rev. 1.7
256K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The LY62W2568 is a 2,097,152-bit low power
CMOS static random access memory organized as
262,144 words by 8 bits. It is fabricated using very
high performance, high reliability CMOS technology.
Its standby current is stable within the range of
operating temperature.
The LY62W2568 is well designed for very low power
system applications, and particularly well suited for
battery back-up nonvolatile memory application.
The LY62W2568 operates from a single power
supply of 2.7V ~ 5.5V and all outputs are fully TTL
compatible
FEATURES
Fast access time : 55/70ns
Low power consumption:
Operating current : 20/18mA (TYP.)
Standby current : 1A (TYP.)
Single 2.7V ~ 5.5V power supply
All outputs TTL compatible
Fully static operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
32-pin 450 mil SOP
32-pin 600 mil P-DIP
36-ball 6mm x 8mm TFBGA
PRODUCT FAMILY
Product
Family
LY62W2568
LY62W2568(I)
Operating
Temperature
0 ~ 70℃
-40 ~ 85℃
Vcc Range
2.7 ~ 5.5V
2.7 ~ 5.5V
Speed
55/70ns
55/70ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
1µA
20/18mA
1µA
20/18mA
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
Vcc
Vss
A0 - A17
DQ0 – DQ7
DECODER
256Kx8
MEMORY ARRAY
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
A0-A17
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
LY62W2568
Rev. 1.7
256K X 8 BIT LOW POWER CMOS SRAM
PIN CONFIGURATION
A17
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SOP/P-DIP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Vcc
A15
CE2
WE#
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
A11
A9
A8
A13
WE#
CE2
A15
Vcc
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
DQ0
A0
A1
A2
A3
LY62W2568
LY62W2568
TSOP TSOP
-I/S
A
B
C
D
E
F
G
H
A0
DQ4
DQ5
Vss
Vcc
DQ6
A1
A2
CE2
WE#
NC
A3
A4
A5
A6
A7
A8
DQ0
DQ1
Vcc
Vss
NC
A17
DQ2
A15 DQ3
A13
A14
DQ7 OE# CE# A16
A9
A10
A11
A12
1
2
3
4
TFBGA
5
6
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
LY62W2568
Rev. 1.7
256K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE#
H
X
L
L
L
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB1
I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
3
LY62W2568
Rev. 1.7
256K X 8 BIT LOW POWER CMOS SRAM
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
PARAMETER
Supply Voltage
V
CC
2.7
*1
Input High Voltage
V
IH
0.7*V
CC
*2
Input Low Voltage
V
IL
- 0.2
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
-1
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
,
I
LO
-1
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
2.4
Output Low Voltage
V
OL
I
OL
= 2mA
-
Cycle time = Min.
- 55
-
CE# = V
IL
and CE2 = V
IH
,
I
CC
I
I/O
= 0mA
- 70
-
Other pins at V
IL
or V
IH
Average Operating
Power supply Current
Cycle time = 1µ s
CE# = 0.2V and CE2
≧
V
CC
-0.2V,
I
CC1
-
I
I/O
= 0mA
Other pins at 0.2V or V
CC
- 0.2V
LL/LLI
-
CE#
≧V
CC
-0.2V
*5
-
25
℃
SL
Standby Power
*5
or CE2
≦
0.2V
SLI
-
I
SB1
40℃
Supply Current
Others at 0.2V or
SL
-
V
CC
- 0.2V
SLI
-
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25
℃
5. This parameter is measured at V
CC
= 3.0V
TYP.
3.0
-
-
-
-
2.7
-
20
18
*4
MAX.
5.5
V
CC
+0.3
0.6
1
1
-
0.4
60
50
UNIT
V
V
V
µA
µA
V
V
mA
mA
4
1
1
1
1
1
10
50
5
5
20
25
mA
µA
µA
µA
µA
µA
CAPACITANCE
(T
A
= 25℃, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to V
CC
- 0.2V
3ns
1.5V
C
L
= 30pF + 1TTL, I
OH
/I
OL
= -2mA/4mA
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4
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