omponents
21201 Itasca Street Chatsworth
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MBR10150CT
•
•
•
Features
High Junction Temperature Capability
Good Trade Off Between Leakage Current
And Forward Volage Drop
Low Leakage Current
10 Amp High Voltage
Power Schottky
Barrier Rectifier
150Volts
TO-220AB
B
C
K
E
PIN
1
3
•
•
•
•
Maximum Ratings
Operating J unction Temperature : 150°C
Storage Temperature: - 50°C to +150°C
Per d iode Thermal Resistance 4°C/W Junction to Case
Total Thermal Resistance 2.4°C/W Junction to Case
MCC
Catalog
Number
MBR 10150 CT
Maximum
Recurrent
Peak Reverse
Voltage
150 V
Maximum
RMS
Voltage
105V
Maximum
DC
Blocking
Voltage
150 V
L
M
D
A
F
G
I
J
N
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
MBR10150CT
I
F(AV)
I
FSM
10 A
120A
T
C
= 155
°C
8.3ms half sine
H H
PIN 1
PIN 3
PIN 2
CASE
A
B
C
D
E
F
G
H
I
J
K
L
M
N
INCHES
.600
.620
.393
.409
.104
.116
.244
.259
.356
.361
.137
.154
.551
.511
.094
.106
.024
.034
.019
.027
.147
.151
.173
.181
.048
.051
0.102 t y p.
MM
15.25
15.75
10.00
10.40
2.65
2.95
6.20
6.60
9.05
9.15
3.50
3.93
13.00
14.00
2.40
2.70
0.61
0.88
0.49
0.70
3.75
3.85
4.40
4.60
1.23
1.32
2.6 t yp .
V
F
V
F
.92V
.75V
I
FM
= 5A
T
J
= 25°C
I
FM
= 5A
T
J
= 125°C
Maximum
Reverse Current At
Rated DC Blocking
Voltage
I
R
50
µ
A
7m A
T
J
= 25°C
T
J
= 125°C
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MBR10150CT
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
5.0
δ
= 0.2
δ
= 0.5
δ
= 0.1
4.5
4.0
δ
= 0.05
3.5
δ
=1
3.0
2.5
2.0
1.5
T
1.0
0.5
IF(av) (A)
tp
δ
=tp/T
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Fig. 2:
Average forward current versus ambient
temperature (δ = 0.5, per diode).
IF(av)(A)
6
Rth(j-a)=Rth(j-c)
5
4
3
2
1
0
δ
=tp/T
tp
T
Rth(j-a)=15°C/W
Tamb(°C)
50
75
100
125
150
175
0
25
Fig. 3:
Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
IM(A)
80
70
60
50
40
30
20
10
0
1E-3
I
M
t
Fig. 4:
Relative variation of thermal impedance
junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c)
1.0
0.8
Tc=50°C
0.6
0.4
0.2
δ
= 0.5
Tc=75°C
δ
= 0.2
δ
= 0.1
Tc=125°C
T
δ
=0.5
t(s)
1E-2
1E-1
1E+0
Single pulse
tp(s)
1E-2
1E-1
0.0
1E-3
δ
=tp/T
tp
1E+0
Fig. 5:
Reverse leakage current versus reverse
voltage applied (typical values, per diode)
IR(µA)
1E+5
1E+4
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
VR(V)
0
25
50
75
100
125
150
Tj=75°C
Tj=175°C
Tj=150°C
Tj=125°C
Fig. 6:
Junction capacitance versus reverse
voltage applied (typical values, per diode).
C(pF)
200
100
50
F=1MHz
Tj=25°C
Tj=25°C
20
VR(V)
10
1
2
5
10
20
50
100
200
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MBR10150CT
Fig. 7:
Forward voltage drop versus forward
current (maximum values, per diode).
Fig. 8:
Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm)
(STPS10150CG only).
Rth(j-a) (°C/W)
80
IFM(A)
100.0
Tj=125°C
Typical values
70
60
50
Tj=25°C
10.0
Tj=125°C
40
30
20
10
0
0
2
4
6
8
1.0
VFM(V)
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
S(cm²)
10
12
14
16
18
20
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