PNP Silicon AF Transistors
SMBTA 55
SMBTA 56
q
High breakdown voltage
q
Low collector-emitter saturation voltage
q
Complementary types: SMBTA 05, SMBTA 06 (NPN)
Type
SMBTA 55
SMBTA 56
Marking
s2H
s2G
Ordering Code
(tape and reel)
Q68000-A3386
Q68000-A2882
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation,
T
S
=
79 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
285
≤
215
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Values
SMBTA 55
SMBTA 56
60
60
80
80
4
500
1
100
200
330
150
– 65 … + 150
Unit
V
mA
A
mA
mW
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
SMBTA 55
SMBTA 56
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA
SMBTA 55
SMBTA 56
Collector-base breakdown voltage
I
C
= 100
µ
A
SMBTA 55
SMBTA 56
Emitter-base breakdown voltage
I
E
= 10
µ
A
Collector-base cutoff current
V
CB
= 60 V
V
CB
= 80 V
V
CB
= 60 V,
T
A
= 150 ˚C
V
CB
= 80 V,
T
A
= 150 ˚C
Collector cutoff current
V
CE
= 60 V
DC current gain
1)
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
1)
I
C
= 100 mA,
I
B
= 10 mA
Base-emitter saturation voltage
1)
I
C
= 100 mA,
V
CE
= 1 V
AC characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f
= 20 MHz
Output capacitance
V
CB
= 10 V,
f
= 1 MHz
f
T
C
obo
–
–
100
12
–
–
MHz
pF
SMBTA 55
SMBTA 56
SMBTA 55
SMBTA 56
I
CE0
h
FE
100
100
V
CEsat
V
BE
–
–
–
130
–
–
–
170
0.25
1.2
V
V
(BR)CE0
60
80
V
(BR)CB0
60
80
V
(BR)EB0
I
CB0
–
–
–
–
–
–
–
–
–
–
100
100
20
20
100
nA
nA
µ
A
µ
A
nA
–
4
–
–
–
–
–
–
–
–
–
–
V
Values
typ.
max.
Unit
1)
Pulse test conditions:
t
≤
300
µ
s,
D
=
2 %.
Semiconductor Group
2
SMBTA 55
SMBTA 56
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Collector current
I
C
=
f
(V
BE
)
V
CE
= 1 V
Permissible pulse load
P
tot max
/P
tot DC
=
f
(t
p
)
Transition frequency
f
T
=
f
(I
C
)
V
CE
= 5 V
Semiconductor Group
3
SMBTA 55
SMBTA 56
Base-emitter saturation voltage
I
C
=
f
(V
BE sat
),
h
FE
= 10
Collector-emitter saturation voltage
I
C
=
f
(V
CE sat
),
h
FE
= 10
Collector cutoff current
I
CB0
=
f
(T
A
)
V
CB
=
V
CE max
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 1 V
Semiconductor Group
4
京公网安备 11010802033920号
EEWORLD
