Datasheet PROFET
BTS 723 GW
Smart High-Side Power Switch
Two Channels: 2 x 100mΩ
Status Feedback
Suitable for 42V
Product Summary
Operating Voltage
V
bb(on)
Active channels
On-state Resistance
R
ON
Nominal load current
I
L(NOM)
Current limitation
I
L(SCr)
7.0 ... 58V
One
two parallel
105mΩ
53mΩ
2.9A
4.2A
8A
8A
Package
P-DSO-14
General Description
•
•
•
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS 80V technology.
Providing embedded protective functions
An array of resistors is integrated in order to reduce the external components
Applications
•
•
•
•
µC compatible high-side power switch with diagnostic feedback for 12V and 24V and
42V
grounded loads
All types of resistive, inductive and capacitive loads
Most suitable for inductive loads
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
•
•
•
•
•
•
•
CMOS compatible input
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Optimized inverscurrent capability
Block Diagram
Status pull
up voltage
IN1
ST1
Vbb
Protection Functions
•
•
•
•
•
•
•
•
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of V
bb
protection
Electrostatic discharge protection (ESD)
Logic
Channel
1
Logic
Channel
2
OUT 1
Load 1
OUT 2
Load 2
IN2
ST2
Diagnostic Function
•
•
•
•
PROFET
Diagnostic feedback with open drain output and integrated
GND
pull up resistors
Open load detection in OFF-state
Feedback of thermal shutdown in ON-state
Diagnostic feedback of both channels works properly in case of inverse current
Infineon Technologies AG
1 of 15
2003-Oct-01
BTS 723 GW
Functional diagram
11
SPU: Pin for external Pull Up Voltage
Leadframe: V
bb
1, 7,
8, 14
2
IN1
R = 20kΩ
R = 12kΩ
Functions and Components of
inputlogic
and
gate-control:
-
ESD-protection
Charge pump, level shifter,
-
rectifier
-
Gate protection
-
Current limit
-
Limit for unclamped
inductive loads
Function and components of
outputlogic
Open load detection
-
Short circuit detection
-
-
Temperature sensor
OUT1
12, 13
Load 1
Load GND
V
bb
3
ST1
R = 850Ω
Status
1
Function see truthtable
Logic channel one
Logic channel two
Function and components of
inputlogic and gate-control
equivalent to channel one
Function and components of
outputlogic equivalent to
channel one
Status 2
Function see truthtable
Load 2
6
IN2
R = 20kΩ
OUT2
9, 10
5
ST2
R = 850Ω
Logic GND
PROFET
Load GND
4
Infineon Technologies AG
2
2003-Oct-01
BTS 723 GW
Pin Definitions and Functions
Pin
1,7,
8,14,
2
6
12,13
9,10
3
5
4
11
Symbol Function
Positive power supply voltage.
Design the
wiring for the simultaneous max. short circuit
V
bb
currents from channel 1 to 2 and also for low
thermal resistance
IN1
Input 1,2
activates channel 1,2 in case
of logic high signal
IN2
Output 1,2
protected high-side power output
OUT1
of channel 1,2. Design the wiring for the max.
short circuit current; both outputpins have to be
OUT2
connected in parallel for operation according
this spec.
ST1
Diagnostic feedback 1,2
of channel 1,2
open drain
ST2
GND
Logic Ground
Connection for
external pull up voltage
source
SPU
for the open drain status output.
Pull up resistors are integrated.
Pin configuration
(top view)
V
bb
IN1
ST1
GND
ST2
IN2
V
bb
1
2
3
4
5
6
7
•
14
13
12
11
10
9
8
V
bb
OUT1
OUT1
SPU
OUT2
OUT2
V
bb
Infineon Technologies AG
3
2003-Oct-01
BTS 723 GW
Maximum Ratings
at
T
j
= 25°C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection
T
j,start
= -40 ...+150°C
Output Voltage to V
bb
Negative voltage slope at output
Load current (Short-circuit current, see page 7)
Load dump protection
2
)
V
LoadDump
=
V
A
+
V
s
,
V
A
= 27 V
R
I
3
)
= 8
Ω,
t
d
= 200 ms; IN = low or high,
each channel loaded with
R
L
= 20
Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)
5)
T
a
= 25°C:
(all channels active)
T
a
= 85°C:
Maximal switchable inductance, single pulse
V
bb
= 12V,
T
j,start
= 150°C
5)
,
I
L
= 2.5 A,
E
AS
= 110 mJ, 0
Ω
one channel:
I
L
= 3.5 A,
E
AS
= 278 mJ, 0
Ω
two parallel channels:
see diagrams on page 12
Symbol
V
bb
V
bb
V
ON
-dV
OUT
/dt
I
L
V
Load dump4
)
T
j
T
stg
P
tot
Values
58
50
70
20
I
L(LIM)
1
70
)
Unit
V
V
V
V/µs
A
V
°C
W
-40 ...+150
-55 ...+150
3.0
1.6
Z
L
V
ESD
V
IN
I
IN
I
ST
V
SPU
23.0
30.0
1.0
±42
±2.0
±2.0
±42
mH
Electrostatic discharge capability (ESD):
(Human Body Model) acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993 R=1.5kΩ; C=100pF
kV
V
mA
V
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Status pull up voltage
1
)
2
)
3)
4)
5
)
Current limit is a protection function. Operation in current limitation is considered as "outside" normal
operating range. Protection functions are not designed for continuous repetitive operation.
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
Infineon Technologies AG
4
2003-Oct-01
BTS 723 GW
Thermal Characteristics
Parameter and Conditions
Symbol
Values
min
typ
Max
--
--
--
--
45
41
25
--
--
Unit
Thermal resistance
junction - soldering point
5),6)
each channel:
R
thjs
junction - ambient
5)
one channel active:
R
thja
all channels active:
K/W
Electrical Characteristics
Parameter and Conditions,
each of the two channels
at T
j
= -40...+150°C,
V
bb
= 24 V unless otherwise specified
Symbol
Values
min
typ
Max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT);
IL = 2 A, V
bb
≥
7V
each channel,
T
j
= 25°C:
R
ON
T
j
= 150°C:
two parallel channels,
T
j
= 25°C:
see diagram, page 12
--
--
--
90
170
45
105
210
53
mΩ
6
)
Soldering point: Upper side of solder edge of device pin 15. See page 15
Infineon Technologies AG
5
2003-Oct-01
京公网安备 11010802033920号
EEWORLD
